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參數(shù)資料
| 型號： | UPA2502 |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | N溝道MOS場效應(yīng)晶體管開關(guān) |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 148K |
| 代理商： | UPA2502 |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
μ
PA2502
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No. G16681EJ1V0DS00 (1st edition)
Date Published September 2004 NS CP(K)
Printed in Japan
2004
DESCRIPTION
The
μ
PA2502, which has a heat spreader, is N-channel
MOS Field Effect Transistor designed for DC/DC converter
and power management applications of notebook computers.
FEATURES
μ
PA2502 has a thin surface mount package with a heat
spreader. The land size is same as 8-pin TSSOP.
Low on-state resistance
R
DS(on)1
= 12.0 m
MAX. (V
GS
= 10.0
V, I
D
= 7.0
A)
R
DS(on)2
= 18.0 m
MAX. (V
GS
= 4.5
V, I
D
= 7.0 A)
Low C
iss
: 760 pF TYP. (V
DS
= 10.0
V, V
GS
= 0
V)
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA2502TM
8PIN HWSON
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Note1
Drain Current (pulse)
Note2
Total Power Dissipation
Note1
Channel Temperature
Storage Temperature
Single Avalanche Current
Note3
Single Avalanche Energy
Note3
Notes 1.
Mounted on FR-4 board of 25 cm
2
x 1.6 mm, PW
≤
10 sec
2.
PW
≤
10
μ
s, Duty Cycle
≤
1%
3.
Starting T
ch
= 25°C, V
DD
= 15.0 V, R
G
= 25
, V
GS
= 20.0
→
0 V
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
I
AS
E
AS
30.0
±20.0
±13.0
±52.0
2.7
150
V
V
A
A
W
°C
°C
A
mJ
55 to +150
13.0
16.9
PACKAGE DRAWING (Unit: mm)
1
2
3
4
8
7
6
5
0
3
±
0
3
±
0
6.4
±
0.1
5.8
±
0.1
4.15
±
0.2
0.85
±
0.15
0.75
±
0.15
0
0
0
+
0.10 S
0
0
+
0
±
0
0
2
±
0
1, 2, 3 : Source
4 : Gate
5, 6, 7, 8: Drain
EQUIVALENT CIRCUIT
Drain
Source
Body
Diode
Gate
Protection
Diode
Gate
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