參數(shù)資料
型號(hào): UPA2502
廠商: NEC Corp.
英文描述: N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
中文描述: N溝道MOS場(chǎng)效應(yīng)晶體管開(kāi)關(guān)
文件頁(yè)數(shù): 4/7頁(yè)
文件大?。?/td> 148K
代理商: UPA2502
Data Sheet G16681EJ1V0DS
4
μ
PA2502
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
0
10
20
30
40
50
60
0
0.2
0.4
0.6
0.8
1
Pulsed
V
GS
= 10.0 V
4.5 V
V
DS
- Drain to Source Voltage - V
I
D
0.001
0.01
0.1
1
10
100
1
2
3
4
5
V
DS
= 10.0 V
Pulsed
T
A
= 125°C
75°C
25°C
25°C
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
0.8
1.2
1.6
2.0
2.4
-50
0
50
100
150
V
DS
= 10.0 V
I
D
= 1.0 mA
T
ch
- Channel Temperature -
°
C
|
f
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V
DS
= 10.0 V
Pulsed
T
A
=
25°C
25°C
75°C
125°C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
D
0
5
10
15
20
25
0.1
1
10
100
Pulsed
10.0 V
V
GS
= 4.5 V
I
D
- Drain Current - A
R
D
0
5
10
15
20
25
0
4
8
12
16
20
I
D
= 7.0 A
Pulsed
V
GS
- Gate to Source Voltage - V
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