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參數(shù)資料
| 型號(hào)： | UPA2757GR-E2-AT |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| 中文描述： | MOS場(chǎng)效應(yīng)晶體管的開關(guān)N溝道功率場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 178K |
| 代理商： | UPA2757GR-E2-AT |
Data Sheet G18206EJ2V0DS
2
μ
PA2757GR
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
30
V
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25
°
C)
Note2
Drain Current (pulse)
Note1
Total Power Dissipation (1 unit)
Note2
Total Power Dissipation (2 units)
Note2
V
GSS
±
20
V
I
D(DC)
±
5.0
A
I
D(pulse)
±
20
A
P
T1
1.7
W
P
T2
2.0
W
Channel Temperature
T
ch
150
°
C
Storage Temperature
Single Avalanche Current
Note3
Single Avalanche Energy
Note3
T
stg
55 to
+
150
°
C
I
AS
5
A
E
AS
2.5
mJ
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Mounted on ceramic substrate of 2000
mm
2
×
1.6 mmt
3.
Starting T
ch
= 25
°
C, V
DD
= 15 V, R
G
= 25
Ω
, V
GS
= 20
→
0 V
<R>
<R>
<R>
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