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參數(shù)資料
| 型號： | UPA2791GR |
| 廠商： | NEC Corp. |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR SWITCHING N- AND P-CHANNEL POWER MOS FET |
| 中文描述： | MOS場效應(yīng)晶體管的開關(guān)N溝道和P溝道功率場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 245K |
| 代理商： | UPA2791GR |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
2006, 2007
MOS FIELD EFFECT TRANSISTOR
μ
PA2791GR
SWITCHING
N- AND P-CHANNEL POWER MOS FET
DATA SHEET
Document No. G18207EJ2V0DS00 (2nd edition)
Date Published November 2007 NS
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DESCRIPTION
The
μ
PA2791GR is N- and P-channel MOS Field Effect
Transistors designed for switching application.
FEATURES
Low on-state resistance
N-channel R
DS(on)1
= 36.0 m
Ω
MAX. (V
GS
= 10 V, I
D
= 3.0 A)
R
DS(on)2
= 50.0 m
Ω
MAX. (V
GS
= 4.5 V, I
D
= 3.0 A)
P-channel R
DS(on)1
= 82 m
Ω
MAX. (V
GS
=
10 V, I
D
=
3.0 A)
R
DS(on)2
= 110 m
Ω
MAX. (V
GS
=
4.5 V, I
D
=
3.0 A)
Low gate charge
N-channel Q
G
= 10 nC TYP. (V
GS
= 10 V)
P-channel Q
G
= 8.3 nC TYP. (V
GS
=
10 V)
Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
μ
PA2791GR-E1-AT
Note
μ
PA2791GR-E2-AT
Note
Pure Sn
Tape 2500
p/reel
Power SOP8
Note
Pb-free (This product does not contain Pb in the external electrode and other parts.)
EQUIVALENT CIRCUIT
N-channel
P-channel
Source
Body
Diode
Gate
Protection
Diode
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge. V
ESD
±
600 V TYP. (C = 100 pF, R = 1.5 k
Ω
)
Gate
Drain
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
PACKAGE DRAWING (Unit: mm)
8
5
1.27
0.12 M
6.0
±
0.3
4.4
0.40
+0.10
0.78 MAX.
0
1
1
0.8
0.5
±
0.2
0
+
–
5.37 MAX.
0.10
1
4
1
2
7, 8 : Drain 1
3
: Source 2
4
: Gate 2
5, 6 : Drain 2
: Source 1
N-channel
P-channel
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UPA2791GR-E1-AT | MOS FIELD EFFECT TRANSISTOR SWITCHING N- AND P-CHANNEL POWER MOS FET |
| UPA2791GR-E2-AT | MOS FIELD EFFECT TRANSISTOR SWITCHING N- AND P-CHANNEL POWER MOS FET |
| UPA505T | N-CHANNEL/P-CHANNEL MOS FET 5-PIN 2 CIRCUITS |
| UPA621TT | |
| UPA801TC | NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD |
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| UPA2791GR-E1-AT | 功能描述:MOSFET N/P-CH 30V 8-SOIC RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標準包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| UPA2791GR-E2-AT | 功能描述:MOSFET N/P-CH 30V 8-SOIC RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標準包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
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| UPA2794GR-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
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