參數(shù)資料
型號(hào)： UPA807T-T1
廠商： NEC Corp.
英文描述： MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD
中文描述： 微波低噪聲放大器NPN硅外延晶體管，內(nèi)置2個(gè)元素的超小型模具
文件頁(yè)數(shù)： 6/8頁(yè)
文件大?。?/td> 56K
代理商： UPA807T-T1
μ
PA807T
6
S-PARAMETERS
V
CE
= 2 V, I
C
= 1 mA, Z
O
= 50
FREQUENCY
S11
S21
S12
S22
MHz
100.0000
200.0000
300.0000
400.0000
500.0000
600.0000
700.0000
800.0000
900.0000
1000.0000
1100.0000
1200.0000
1300.0000
1400.0000
1500.0000
1600.0000
1700.0000
1800.0000
1900.0000
2000.0000
ANG
–3.6
–7.4
–10.5
–14.4
–17.4
–20.4
–23.8
–26.5
–29.2
–32.0
–34.1
–36.4
–38.4
–40.4
–42.6
–44.1
–45.9
–47.4
–48.8
–50.4
ANG
–3.3
–6.8
–9.8
–13.9
–16.7
–20.7
–24.1
–27.3
–31.1
–33.5
–37.8
–40.5
–44.0
–47.4
–50.2
–53.5
–56.4
–59.0
–61.6
–64.7
MAG
0.996
0.993
0.983
0.964
0.955
0.932
0.913
0.888
0.865
0.847
0.822
0.803
0.782
0.758
0.743
0.719
0.699
0.681
0.666
0.647
ANG
84.7
83.0
80.2
76.3
73.9
71.0
68.0
65.9
63.8
61.6
59.3
57.8
56.1
54.6
53.0
51.6
50.5
49.6
48.8
48.0
MAG
2.003
1.935
1.940
2.017
1.946
1.993
1.957
1.942
2.004
1.911
1.973
1.951
1.928
1.956
1.889
1.896
1.873
1.835
1.815
1.801
MAG
0.018
0.036
0.052
0.069
0.085
0.099
0.113
0.126
0.137
0.147
0.159
0.168
0.177
0.184
0.193
0.198
0.204
0.210
0.215
0.220
MAG
0.982
0.985
0.977
0.960
0.952
0.925
0.908
0.884
0.859
0.840
0.815
0.795
0.772
0.741
0.716
0.689
0.659
0.635
0.606
0.581
ANG
173.6
168.2
162.7
157.1
152.1
147.7
143.2
138.8
135.0
131.4
127.7
124.0
120.4
116.7
113.2
109.8
106.7
103.4
100.7
97.6
V
CE
= 2 V, I
C
= 3 mA, Z
O
= 50
FREQUENCY
S11
S21
S12
S22
MHz
100.0000
200.0000
300.0000
400.0000
500.0000
600.0000
700.0000
800.0000
900.0000
1000.0000
1100.0000
1200.0000
1300.0000
1400.0000
1500.0000
1600.0000
1700.0000
1800.0000
1900.0000
2000.0000
ANG
–6.3
–12.5
–17.5
–22.6
–26.4
–29.6
–33.0
–35.0
–37.0
–38.9
–40.3
–41.4
–43.0
–43.9
–44.9
–45.6
–46.4
–47.2
–47.8
–48.6
ANG
–5.7
–11.6
–16.6
–23.1
–27.0
–32.9
–38.0
–42.0
–46.6
–49.9
–54.0
–56.5
–59.2
–61.5
–63.5
–64.9
–66.4
–67.7
–69.2
–70.4
MAG
0.979
0.959
0.924
0.874
0.838
0.787
0.745
0.706
0.673
0.645
0.617
0.593
0.569
0.548
0.532
0.517
0.501
0.488
0.478
0.464
ANG
84.9
79.6
75.2
72.2
69.1
67.6
65.0
63.8
63.0
61.9
61.1
60.8
60.2
59.9
59.5
59.1
58.7
58.6
58.4
58.2
MAG
5.575
5.330
5.178
5.267
4.943
4.915
4.769
4.578
4.507
4.285
4.163
4.009
3.814
3.672
3.499
3.349
3.213
3.079
2.959
2.863
MAG
0.017
0.033
0.049
0.062
0.074
0.086
0.095
0.104
0.112
0.120
0.128
0.136
0.143
0.150
0.157
0.164
0.172
0.178
0.185
0.193
MAG
0.933
0.922
0.893
0.851
0.815
0.759
0.713
0.664
0.612
0.572
0.525
0.485
0.452
0.413
0.385
0.356
0.330
0.307
0.286
0.265
ANG
170.0
161.5
154.0
146.8
141.1
135.2
129.6
124.5
119.7
115.6
111.0
106.8
103.4
99.6
96.7
93.6
90.9
88.2
85.9
83.5
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
UPA807T-T1-A 功能描述:射頻雙極小信號(hào)晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
UPA808 制造商:NEC 制造商全稱:NEC 功能描述:MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD
UPA808T 制造商:Renesas Electronics Corporation 功能描述:RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT
UPA808T-A 功能描述:射頻雙極小信號(hào)晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
UPA808TC 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON HIGH FREQUENCY TRANSISTOR
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