參數(shù)資料
型號(hào)： UPA807T
廠商： NEC Corp.
英文描述： MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD
中文描述： 微波低噪聲放大器NPN硅外延晶體管，內(nèi)置2個(gè)元素的超小型模具
文件頁(yè)數(shù)： 7/8頁(yè)
文件大?。?/td> 56K
代理商： UPA807T
μ
PA807T
7
S-PARAMETERS
V
CE
= 2 V, I
C
= 5 mA, Z
O
= 50
FREQUENCY
S11
S21
S12
S22
MHz
100.0000
200.0000
300.0000
400.0000
500.0000
600.0000
700.0000
800.0000
900.0000
1000.0000
1100.0000
1200.0000
1300.0000
1400.0000
1500.0000
1600.0000
1700.0000
1800.0000
1900.0000
2000.0000
ANG
–8.1
–15.6
–21.4
–26.5
–30.0
–32.3
–34.9
–36.2
–37.6
–38.5
39.7
–40.2
–41.0
–41.6
–42.3
–42.6
–43.3
–43.7
–44.2
–45.0
ANG
–8.3
–15.7
–22.2
–30.3
–35.3
–41.5
–46.7
–50.2
–53.7
–55.9
–58.4
–59.5
–61.3
–61.9
–63.2
–63.4
–63.7
–63.8
–64.7
–64.8
MAG
0.964
0.926
0.868
0.801
0.752
0.696
0.650
0.612
0.581
0.557
0.534
0.515
0.495
0.481
0.467
0.456
0.446
0.435
0.427
0.419
ANG
82.5
78.3
73.6
71.7
68.6
67.5
66.1
65.7
65.0
64.6
64.6
64.6
64.1
64.0
63.7
63.4
63.3
62.7
62.5
62.3
MAG
8.518
8.125
7.721
7.619
7.082
6.779
6.401
5.962
5.613
5.244
4.918
4.631
4.346
4.103
3.875
3.680
3.502
3.338
3.193
3.064
MAG
0.017
0.032
0.046
0.057
0.068
0.077
0.086
0.094
0.102
0.111
0.118
0.127
0.134
0.142
0.150
0.157
0.165
0.172
0.181
0.188
MAG
0.885
0.859
0.811
0.742
0.689
0.612
0.550
0.495
0.446
0.406
0.369
0.337
0.310
0.285
0.263
0.244
0.225
0.210
0.193
0.178
ANG
167.7
157.0
148.0
139.7
132.9
125.8
119.7
114.6
109.9
105.8
101.9
98.5
95.5
92.6
90.0
87.4
85.1
83.0
80.9
78.9
V
CE
= 2 V, I
C
= 7 mA, Z
O
= 50
FREQUENCY
S11
S21
S12
S22
MHz
100.0000
200.0000
300.0000
400.0000
500.0000
600.0000
700.0000
800.0000
900.0000
1000.0000
1100.0000
1200.0000
1300.0000
1400.0000
1500.0000
1600.0000
1700.0000
1800.0000
1900.0000
2000.0000
ANG
–9.4
–17.6
–23.4
–28.2
–31.0
–32.9
–34.6
–35.3
–36.4
–36.8
–37.7
–37.8
–38.6
–39.0
–39.7
–40.1
–40.5
–41.0
–41.4
–42.1
ANG
–10.5
–19.7
–27.4
–36.2
–41.6
–47.0
–51.4
–54.0
–56.3
–57.7
–59.5
–59.6
–61.1
–61.2
–62.1
–61.7
–61.5
–60.6
–60.8
–60.9
MAG
0.952
0.897
0.825
0.751
0.696
0.640
0.598
0.564
0.537
0.517
0.496
0.482
0.465
0.456
0.443
0.435
0.426
0.418
0.411
0.406
ANG
82.0
77.4
73.3
71.2
69.1
68.1
67.5
67.2
67.0
67.1
67.0
67.0
66.5
66.8
66.1
65.7
65.4
65.1
64.7
64.5
MAG
0.016
0.031
0.043
0.053
0.063
0.073
0.081
0.089
0.097
0.105
0.114
0.122
0.130
0.138
0.147
0.154
0.163
0.171
0.179
0.187
MAG
0.836
0.794
0.731
0.645
0.579
0.500
0.440
0.393
0.352
0.319
0.290
0.265
0.242
0.223
0.204
0.189
0.175
0.162
0.148
0.137
ANG
165.5
153.3
143.3
133.7
126.3
119.3
113.3
108.6
104.4
100.8
97.3
94.4
91.6
89.0
86.5
84.3
82.3
80.2
78.3
76.6
MAG
11.040
10.358
9.657
9.225
8.418
7.759
7.124
6.499
6.003
5.536
5.135
4.801
4.484
4.221
3.974
3.760
3.565
3.393
3.248
3.106
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
UPA807T-A 功能描述:射頻雙極小信號(hào)晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
UPA807TT1 制造商:NEC/CEL 功能描述:New
UPA807T-T1 制造商:California Eastern Laboratories (CEL) 功能描述:Trans GP BJT NPN 3V 0.01A 6-Pin SOT-363 T/R
UPA807T-T1-A 功能描述:射頻雙極小信號(hào)晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
UPA808 制造商:NEC 制造商全稱:NEC 功能描述:MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD
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