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| 型號： | UPA812T-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD |
| 中文描述： | 高頻低噪聲放大器NPN硅外延晶體管，配有2個2SC4227小微型模具 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 50K |
| 代理商： | UPA812T-T1 |
1995
PRELIMINARY DATA SHEET
PACKAGE DRAWINGS
(Unit: mm)
SILICON TRANSISTOR
μ
PA812T
The
μ
PA812T has built-in 2 low-voltage transistors which are designed to
amplify low noise in the VHF band to the UHF band.
FEATURES
Low Noise
NF = 1.4 dB TYP. @ f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
High Gain
|S
21e
|
2
= 12 dB TYP. @ f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
A Small Mini Mold Package Adopted
Built-in 2 Transistors (2
×
2SC4227)
ORDERING INFORMATION
PART NUMBER
QUANTITY
PACKING STYLE
μ
PA812T
Loose products
(50 PCS)
Embossed tape 8 mm wide. Pin 6 (Q1
Base), Pin 5 (Q1 Emitter), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
μ
PA812T-T1
Taping products
(3 KPCS/Reel)
Remark
If you require an evaluation sample, please contact an NEC Sales
Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
V
CBO
20
V
Collector to Emitter Voltage
V
CEO
10
V
Emitter to Base Voltage
V
EBO
1.5
V
Collector Current
I
C
65
mA
Total Power Dissipation
P
T
150 in 1 element
200 in 2 elements
Note
mW
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
–65 to +150
C
Note
110 mW must not be exceeded in 1 element.
HIGH-FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2
×
2SC4227) SMALL MINI MOLD
Document No. P11465EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
The information in this document is subject to change without notice.
PIN CONFIGURATION (Top View)
PIN CONNECTIONS
1. Collector (Q1)
2. Base (Q2)
3. Collector (Q2)
4. Emitter (Q2)
5. Emitter (Q1)
6. Base (Q1)
6
5
4
1
2
3
Q
1
Q
2
2.1±0.1
1.25
1
2
3
6
5
4
0
–
+
0
0
1
2
0
0
0
0
–
+
X
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA812T-T1-A | 功能描述:射頻雙極小信號晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| UPA813 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4570 SMALL MINI MOLD |
| UPA813T | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4570 SMALL MINI MOLD |
| UPA813T-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4570 SMALL MINI MOLD |
| UPA814 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5195 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD |
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