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參數(shù)資料
| 型號： | UPA814TC |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5195 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD |
| 中文描述： | NPN硅外延晶體管，配有2個2SC5195平引腳6引腳薄型超超級MINIMOLD |
| 文件頁數(shù)： | 1/20頁 |
| 文件大?。?/td> | 84K |
| 代理商： | UPA814TC |
NPN SILICON RF TWIN TRANSISTOR
μ
PA814TC
FEATURES
Low voltage operation, low phase distortion
Low noise: NF = 1.5 dB TYP. @ V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz
NF = 1.7 dB TYP. @ V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
Flat-lead 6-pin thin-type ultra super minimold package.
Built-in 2 transistors (2
×
2SC5195)
ORDERING INFORMATION
Part Number
Package
Quantity
Supplying Form
μ
PA814TC
Flat-lead 6-pin
thin-type ultra
super minimold
Loose products
(50 pcs)
Embossed tape 8 mm wide.
Pin 6 (Q1 Base), Pin 5 (Q1 Emitter), Pin 4 (Q2 Emitter) face to
perforation side of the tape.
μ
PA814TC-T1
Taping products
(3 kp/reel)
Remark
To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:
μ
PA814TC. Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (T
A
= +25
°
C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
V
CBO
9
V
Collector to Emitter Voltage
V
CEO
6
V
Emitter to Base Voltage
V
EBO
2
V
Collector Current
I
C
100
mA
Total Power Dissipation
P
T
Note
200 in 1 element
230 in 2 elements
mW
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
–65 to +150
C
Note
Mounted on 1.08 cm
2
×
1.0 mm glass epoxy substrate.
Caution Electro-static sensitive devices
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2
×
2SC5195)
FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
Printed in Japan
Document No.
Date Published November 1999 N CP(K)
P14551EJ1V0DS00 (1st edition)
1999
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability
and additional information.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UPA814TC-T1 | NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5195 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD |
| UPA822TF | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| UPA822TF-T1 | BJT |
| UPA826TC-T1 | NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5010 FLAT-LEAD 6-PIN THIN -TYPE ULTRA SUPER MINIMOLD |
| UPA826TF | NPN SILICON EPITAXIAL TWIN TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA814TC-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5195 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD |
| UPA814TF | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| UPA814TF-T1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| UPA814TKB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | NPN | 6V V(BR)CEO | 100MA I(C) | SOT-363 |
| UPA814T-T1 | 功能描述:TRANS NPN HF FT=9GHZ SOT-363 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF 晶體管 (BJT) 系列:- 產(chǎn)品變化通告:Product Discontinuation 17/Dec/2010 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發(fā)射極擊穿（最大）:4.7V 頻率 - 轉(zhuǎn)換:47GHz 噪聲系數(shù)（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應(yīng)商設(shè)備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR |
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