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參數(shù)資料
| 型號： | UPD44324185F5-E40-EQ2 |
| 廠商： | NEC Corp. |
| 英文描述： | 36M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION |
| 中文描述： | 36M條位條DDRII SRAM的分離I / O 2字爆發(fā)運(yùn)作 |
| 文件頁數(shù)： | 13/32頁 |
| 文件大小： | 360K |
| 代理商： | UPD44324185F5-E40-EQ2 |
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13
Preliminary Data Sheet
M16782EJ1V0DS
μ
PD44324085, 44324095, 44324185, 44324365
Electrical Specifications
Absolute Maximum Ratings
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Supply voltage
V
DD
–0.5
+2.5
V
Output supply voltage
V
DD
Q
–0.5
V
DD
V
Input voltage
V
IN
–0.5
V
DD
+ 0.5 (2.5 V MAX.)
V
Input / Output voltage
V
I/O
–0.5
V
DD
Q
+ 0.5 (2.5 V MAX.)
V
Operating ambient temperature
T
A
0
70
°C
Storage temperature
T
stg
–55
+125
°C
Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended DC Operating Conditions (T
A
= 0 to 70
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Note
Supply voltage
V
DD
1.7
1.9
V
Output supply voltage
V
DD
Q
1.4
V
DD
V
1
High level input voltage
V
IH (DC)
V
REF
+ 0.1
V
DD
Q
+ 0.3
V
1, 2
Low level input voltage
V
IL (DC)
–0.3
V
REF
– 0.1
V
1, 2
Clock input voltage
V
IN
–0.3
V
DD
Q
+ 0.3
V
1, 2
Reference voltage
V
REF
0.68
0.95
V
Notes 1.
During normal operation, V
DD
Q must not exceed V
DD
.
2.
Power-up: V
IH
≤
V
DD
Q + 0.3 V and V
DD
≤
1.7 V and V
DD
Q
≤
1.4 V for t
≤
200 ms
Recommended AC Operating Conditions (T
A
= 0 to 70
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Note
High level input voltage
V
IH (AC)
V
REF
+ 0.2
–
V
1
Low level input voltage
V
IL (AC)
–
V
REF
– 0.2
V
1
Note 1.
Overshoot: V
IH (AC)
≤
V
DD
+ 0.7 V for t
≤
TKHKH/2
Undershoot: V
IL (AC)
≥
– 0.5 V for t
≤
TKHKH/2
Control input signals may not have pulse widths less than TKHKL (MIN.) or operate at cycle rates less than
TKHKH (MIN.).
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| UPD44324365F5-E33-EQ2 | 36M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION |
| UPD44324085F5-E40-EQ2 | 36M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPD44324362BF5-E40-FQ1 | 制造商:Renesas Electronics Corporation 功能描述:36MB, DDRII SRAM - Trays 制造商:Renesas Electronics Corporation 功能描述:IC SRAM DDRII 36MBIT 165BGA |
| UPD44324362BF5-E40-FQ1-A | 制造商:Renesas Electronics Corporation 功能描述:36MB, DDRII SRAM - Trays 制造商:Renesas Electronics Corporation 功能描述:IC SRAM DDRII 36MBIT 165BGA |
| UPD44324365BF5-E40-FQ1 | 制造商:Renesas Electronics Corporation 功能描述:36MB, DDRII SRAM - Trays 制造商:Renesas Electronics Corporation 功能描述:IC SRAM DDRII 36MBIT 165BGA |
| UPD44324365BF5-E40-FQ1-A | 制造商:Renesas Electronics Corporation 功能描述:36MB, DDRII SRAM - Trays 制造商:Renesas Electronics Corporation 功能描述:IC SRAM DDRII 36MBIT 165BGA |
| UPD44325084BF5-E40-FQ1 | 制造商:Renesas Electronics Corporation 功能描述:IC SRAM QDRII 36MBIT 165BGA |
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