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參數(shù)資料
| 型號： | UPD448012GY-C12X-MJH |
| 廠商： | NEC Corp. |
| 英文描述： | 8M-BIT CMOS STATIC RAM 512K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION |
| 中文描述： | 800萬位CMOS靜態(tài)RAM為512k字由16位溫度范圍 |
| 文件頁數(shù)： | 7/24頁 |
| 文件大小： | 147K |
| 代理商： | UPD448012GY-C12X-MJH |
Data Sheet M14466EJ5V0DS
7
μ
PD448012-X
DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted) (2/2)
Parameter
Symbol
Test condition
V
CC
≥
2.2 V
Unit
μ
PD448012-CxxX
MIN.
TYP.
MAX.
Input leakage current
I
LI
V
IN
= 0 V to V
CC
–1.0
+1.0
μ
A
I/O leakage current
I
LO
V
I/O
= 0 V to V
CC
, /CE1 = V
IH
or
–1.0
+1.0
μ
A
CE2 = V
IL
or /WE = V
IL
or /OE = V
IH
Operating supply current
I
CCA1
/CE1 = V
IL
, CE2 = V
IH
, Minimum cycle time,
–
45
mA
I
I/O
= 0 mA
V
CC
≤
2.7 V
–
30
I
CCA2
/CE1 = V
IL
, CE2 = V
IH
, I
I/O
= 0 mA,
–
4
Cycle time =
∞
V
CC
≤
2.7 V
–
2
I
CCA3
/CE1
≤
0.2 V, CE2
≥
V
CC
– 0.2 V,
–
6
Cycle time = 1
μ
s, I
I/O
= 0 mA, V
IL
≤
0.2 V,
V
IH
≥
V
CC
– 0.2 V
V
CC
≤
2.7 V
–
5
Standby supply current
I
SB
/CE1 = V
IH
or CE2 = V
IL
or
–
0.6
mA
/LB = /UB = V
IH
V
CC
≤
2.7 V
–
0.6
I
SB1
/CE1
≥
V
CC
0.2 V,
1.0
15
μ
A
CE2
≥
V
CC
0.2 V
V
CC
≤
2.7 V
0.9
13
I
SB2
CE2
≤
0.2 V
1.0
15
V
CC
≤
2.7 V
0.9
13
I
SB3
/LB = /UB
≥
V
CC
0.2 V, /CE1
≤
0.2 V,
1.0
15
CE2
≥
V
CC
0.2 V
V
CC
≤
2.7 V
0.9
13
High level output voltage
V
OH
I
OH
= –0.5 mA
2.4
V
V
CC
≤
2.7 V
1.8
Low level output voltage
V
OL
I
OL
= 1.0 mA
0.4
V
Remarks 1.
V
IN
: Input voltage, V
I/O
: Input / Output voltage
2.
These DC characteristics are in common regardless of product classification.
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