參數(shù)資料
型號(hào)： UPD4483362GF-A75
廠商： NEC Corp.
英文描述： 8M-BIT CMOS SYNCHRONOUS FAST STATIC RAM 256K-WORD BY 36-BIT HSTL INTERFACE / REGISTER-REGISTER / LATE WRITE
中文描述： 800萬(wàn)位CMOS同步快速靜態(tài)內(nèi)存256K - Word的36位HSTL接口/寄存器間/晚寫(xiě)
文件頁(yè)數(shù)： 6/16頁(yè)
文件大小： 94K
代理商： UPD4483362GF-A75
6
μ
PD4483362
Preliminary Data Sheet M14440EJ1V0DS
Electrical Specifications
Absolute Maximum Ratings
Parameter
Symbol
Condition
MIN.
TYP.
MAX.
Unit
Note
Supply voltage
V
DD
–0.5
+4.0
V
1
Output supply voltage
V
DD
Q
–0.5
+4.0
V
1
Input voltage
V
IN
–0.5
V
DD
+0.3
V
1
Input / Output voltage
V
I/O
–0.5
V
DD
Q+0.3
V
1
Operating temperature
T
A
0
50
°C
Storage temperature
T
stg
–55
+125
°C
Note 1.
–2.0 V MIN. (Pulse width : 2 ns)
Caution
Exposing the device to stress above those listed in Absolute Maximum Rating could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended DC Operating Conditions (T
A
= 0 to 50
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Core supply voltage
V
DD
3.135
3.3
3.465
V
Output buffer supply voltage
V
DD
Q
1.4
1.5
1.6
V
Input reference voltage
V
REF
0.7
0.75
0.8
V
Low level input voltage
V
IL
–0.3
Note
V
REF
–0.1
V
High level input voltage
V
IH
V
REF
+0.1
V
DD
Q+0.3
V
Note
–0.8 V MIN. (Pulse width : 2 ns)
Recommended AC Operating Conditions (T
A
= 0 to 50
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Input reference voltage
V
REF (RMS)
–5%
+5%
V
Low level input voltage
V
IL
–0.3
V
REF
–0.2
V
High level input voltage
V
IH
V
REF
+0.2
V
DD
Q+0.3
V
Capacitance (T
A
= 25
°
C, f = 1 MHz)
Parameter
Note
Symbol
Test conditions
MAX.
Unit
Input capacitance
C
IN
V
IN
= 0 V
5.5
pF
Input / Output capacitance
C
I/O
V
I/O
= 0 V
7.0
pF
Clock Input Capacitance
C
clk
V
clk
= 0 V
6.0
pF
Note
These parameters are not 100% tested.
相關(guān)PDF資料
PDF描述
UPD45128163G5-A80 128M-bit Synchronous DRAM 4-bank, LVTTL
UPD45128163-E 128M-bit Synchronous DRAM 4-bank, LVTTL
UPD45128163-I 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
UPD45128163-I-E 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
UPD45128163G5 128M-bit Synchronous DRAM 4-bank, LVTTL
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
UPD45128163G5 制造商:Renesas Electronics Corporation 功能描述:128 MBIT SDRAM
UPD45128163G5-A75-9JF 制造商:Elpida Memory Inc 功能描述:8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
UPD45128841G5-A75-9JF 制造商:NEC Electronics Corporation 功能描述:SDRAM, 16M x 8, 54 Pin, Plastic, TSOP
UPD4516161AG5A109NF 制造商:NEC Electronics Corporation 功能描述:
UPD4516161AG5-A10-9NF 制造商:NEC Electronics Corporation 功能描述:SDRAM, 1M x 16, 50 Pin, Plastic, TSOP
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*