參數(shù)資料
型號(hào): UPD45128441G5-A75-9JF
廠商: ELPIDA MEMORY INC
元件分類: DRAM
英文描述: 128M-bit Synchronous DRAM 4-bank, LVTTL
中文描述: 32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
封裝: PLASTIC, TSOP2-54
文件頁數(shù): 34/92頁
文件大小: 682K
代理商: UPD45128441G5-A75-9JF
Data Sheet E0031N30
34
μ
PD45128441, 45128841, 45128163
13. Electrical Specifications
All voltages are referenced to V
SS
(GND).
After power up, wait more than 100
μ
s and then, execute
Power on sequence and CBR (auto) Refresh
before
proper device operation is achieved.
Absolute Maximum Ratings
Parameter
Symbol
Condition
Rating
Unit
Voltage on power supply pin relative to GND
V
CC
, V
CC
Q
0.5 to +4.6
V
Voltage on any pin relative to GND
V
T
0.5 to +4.6
V
Short circuit output current
I
O
50
mA
Power dissipation
P
D
1
W
Operating ambient temperature
T
A
0 to 70
°
C
Storage temperature
T
stg
55 to + 125
°
C
Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum
Rating conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Condition
MIN.
TYP.
MAX.
Unit
Supply voltage
V
CC
, V
CC
Q
3.0
3.3
3.6
V
High level input voltage
V
IH
2.0
V
CC
+0.3
Note1
V
Low level input voltage
V
IL
0.3
Note2
+0.8
V
Operating ambient temperature
T
A
0
70
°
C
Notes 1.
V
IH (MAX.)
= V
CC
+ 1.5 V (Pulse width
5 ns)
2.
V
IL (MIN.)
= –1.5 V (Pulse width
5 ns)
Pin Capacitance (T
A
= 25
°
C, f = 1 MHz)
Parameter
Symbol
Condition
MIN.
TYP.
MAX.
Unit
Input capacitance
C
I1
CLK
2.5
3.5
pF
C
I2
A0 - A11, BA0(A13), BA1(A12), CKE,
/CS, /RAS, /CAS, /WE, DQM, UDQM,
LDQM
DQ0 - DQ15
2.5
3.8
Data input / output capacitance
C
I/O
4
6.5
pF
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