參數(shù)資料
型號(hào): UPD4564323G5-A70-9JH
廠商: NEC Corp.
英文描述: 64M-bit Synchronous DRAM 4-bank, LVTTL
中文描述: 6400位同步DRAM 4銀行,LVTTL
文件頁數(shù): 33/84頁
文件大?。?/td> 1048K
代理商: UPD4564323G5-A70-9JH
Data Sheet M14376EJ2V0DS00
33
μ
PD4564323 for Rev.
E
DC Characteristics 1 (Recommended Operating Conditions unless otherwise noted)
Parameter
Symbol
Test conditions
/CAS
latency
Grade
Maximum
Unit
Notes
Operating current
I
CC1
Burst length
=
1,
t
RC
t
RC(MIN.)
,
I
O
= 0
mA,
CL=2
-A60
150
mA
1
-A70
140
-A80
130
One bank active
-A10
130
-A10B
120
CL=3
-A60
160
-A70
150
-A80
140
-A10
140
-A10B
130
Precharge standby current
I
CC2
P
CKE
V
IL(MAX.)
, t
CK
=
15
ns
CKE
V
IL(MAX.)
, t
CK
=
CKE
V
IH(MIN.)
, t
CK
=
15
ns, CS
V
IH(MIN.)
,
Input signals are changed one time during 30
ns
CKE
V
IH(MIN.)
, t
CK
=
,
Input signals are stable.
CKE
V
IL(MAX.)
, t
CK
=
15
ns
CKE
V
IL(MAX.)
, t
CK
=
CKE
V
IH(MIN.)
, t
CK
=
15
ns, /CS
V
IH(MIN.)
,
Input signals are changed one time during 30
ns.
CKE
V
IH(MIN.)
, t
CK
=
, Input signals are stable.
t
CK
t
CK(MIN.)
,
1
mA
in power down mode
I
CC2
PS
1
Precharge standby current in
non power down mode
I
CC2
N
20
mA
I
CC2
NS
6
Active standby current in
I
CC3
P
5
mA
power down mode
I
CC3
PS
4
Active standby current in
non power down mode
I
CC3
N
30
mA
I
CC3
NS
20
Operating current
I
CC4
CL=2
-A60
170
mA
2
(Burst mode)
I
O
= 0
mA,
-A70
170
All banks active
-A80
170
-A10
140
-A10B
130
CL=3
-A60
240
-A70
220
-A80
190
-A10
180
-A10B
160
CBR (auto) refresh current
I
CC5
t
RC
t
RC(MIN.)
CL=2
-A60
160
mA
3
-A70
150
-A80
150
-A10
150
-A10B
130
CL=3
-A60
170
-A70
160
-A80
160
-A10
160
-A10B
140
Self refresh current
Notes 1.
I
CC1
depends on output loading and cycle rates. Specified values are obtained with the output open. In
addition to this, I
CC1
is measured on condition that addresses are changed only one time during t
CK(MIN.)
.
2
. I
CC4
depends on output loading and cycle rates. Specified values are obtained with the output open. In
addition to this, I
CC4
is measured on condition that addresses are changed only one time during t
CK(MIN.)
.
I
CC6
CKE
0.2
V
1
mA
3.
I
CC5
is measured on condition that addresses are changed only one time during t
CK(MIN.)
.
#
相關(guān)PDF資料
PDF描述
UPD46128512-E10X 128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
UPD46128512-E11X 128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
UPD46128512-E12X 128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
UPD46128512-E9X 128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
UPD46128512-X 128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
UPD45D128442G5C759LG 制造商:NEC 功能描述:*
UPD4701AC-A 制造商:Renesas Electronics 功能描述:Cut Tape
UPD4702C-A 制造商:Renesas Electronics 功能描述:Cut Tape
UPD4702G-A 制造商:Renesas Electronics 功能描述:Cut Tape
uPD4704C(A) 制造商:Renesas Electronics 功能描述:Cut Tape