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參數(shù)資料
| 型號： | UPD46128512-E12X |
| 廠商： | NEC Corp. |
| 英文描述： | 128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION |
| 中文描述： | 128兆位CMOS移動指明內(nèi)存800萬字由16位溫度范圍 |
| 文件頁數(shù)： | 1/82頁 |
| 文件大小： | 817K |
| 代理商： | UPD46128512-E12X |
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Document No. M17507EJ2V0DS00 (2nd edition)
Date Published September 2005 CP (K)
Printed in Japan
MOS INTEGRATED CIRCUIT
μ
PD46128512-X
128M-BIT CMOS MOBILE SPECIFIED RAM
8M-WORD BY 16-BIT
EXTENDED TEMPERATURE OPERATION
PRELIMINARY DATA SHEET
2005
The mark shows major revised points.
Description
The
μ
PD46128512-X is a high speed, low power, 134,217,728 bits (8,388,608 words by 16 bits) CMOS Mobile
Specified RAM featuring asynchronous page read and random write, synchronous burst read/write function.
The
μ
PD46128512-X is fabricated with advanced CMOS technology using one-transistor memory cell.
Features
8,388,608 words by 16 bits organization
Asynchronous page read mode
Synchronous read and write mode
Burst length: 8 words / 16 words / continuous
Clock latency: 5, 6, 7, 8, 9, 10
Burst sequence: Linear burst
Max clock frequency: 108/83 MHz
Byte data control: /LB (DQ0 to DQ7), /UB (DQ8 to DQ15)
Low voltage operation: 1.7 to 2.0 V
Operating ambient temperature: T
A
=
30 to
+
85 °C
Chip Enable input: /CE1 pin
Standby Mode input: CE2 pin
Standby Mode 1: Normal standby (Memory cell data hold valid)
Standby Mode 2: Density of memory cell data hold is variable
μ
PD46128512
Clock
Asynchronous Operating
Operating
Supply current
frequency initial access
supply
ambient
At operating
At standby
μ
A
MHz
time
voltage
temperature
mA
(MAX.)
(TYP.)
(MAX.)
ns
V
°C
(MAX.)
Density of data hold
Density of data hold
(MAX.)
128M 32M
16M
8M
0M 128M 32M 16M
8M
0M
bits
bits
bits
bits
bits
bits
bits
bits
bits
bits
-E9X
Note
108
70
1.7 to 2.0
30 to
+
85
60
250 T.B.D.T.B.D.T.B.D. 65
80 T.B.D.T.B.D.T.B.D.
15
-E10X
Note
85
50
-E11X
83
70
60
-E12X
85
50
Note
Under consideration
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