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參數(shù)資料
| 型號(hào)： | UPD46128512-E12X |
| 廠商： | NEC Corp. |
| 英文描述： | 128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION |
| 中文描述： | 128兆位CMOS移動(dòng)指明內(nèi)存800萬(wàn)字由16位溫度范圍 |
| 文件頁(yè)數(shù)： | 21/82頁(yè) |
| 文件大?。?/td> | 817K |
| 代理商： | UPD46128512-E12X |
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Preliminary Data Sheet M17507EJ2V0DS
21
μ
PD46128512-X
4.9 Burst Write Termination
Burst write termination can be performed by transferring /CE1 LOW to HIGH during the burst write. When continuous
burst length is set, burst write is endless unless it is terminated. Be sure to terminate a burst write after latching the first
write data.
In order to guarantee the last write data is latched, the specified minimum value of /CE1 = LOW hold time against clock
edge must be satisfied. In order to perform next operation after burst write termination, the specified minimum value of
Burst Write Termination recovery time (t
TRB
) must be satisfied.
Figure 4-6. Burst Write Termination
CLK (Input)
/ADV (Input)
/WE (Input)
A0 to A22 (Input)
/CE1 (Input)
DQ0 to DQ15 (Output)
Valid
t
ACS
t
ACH
t
CHV
t
CSV
t
CHV
t
AH
t
WRB
t
CEH
t
CES
t
TRB
t
CEH
t
CES
High-Z
D2
D1
D3
t
WDH
t
WDS
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