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參數(shù)資料
| 型號： | UPD4616112F9-B95LX-BC2 |
| 廠商： | NEC Corp. |
| 英文描述： | 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION |
| 中文描述： | 1,600位CMOS移動指明內(nèi)存100萬字由16位溫度范圍 |
| 文件頁數(shù)： | 16/32頁 |
| 文件大?。?/td> | 212K |
| 代理商： | UPD4616112F9-B95LX-BC2 |
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Data Sheet M15794EJ2V0DS
16
μ
PD4616112-X
4.
Definition of write start and write end
/CS
/WE
/LB, /UB
Status
Write start pattern 1
H to L
L
L
If /WE, /LB, /UB are low level, time when /CS
changes from high level to low level
If /CS, /LB, /UB are low level, time when /WE
changes from high level to low level
If /CS, /WE are low level, time when /LB or
/UB changes from high level to low level
Write start pattern 2
L
H to L
L
Write start pattern 3
L
L
H to L
Write end pattern 1
L
L to H
L
If /CS, /WE, /LB, /UB are low level, time when
/WE changes from low level to high level
When /CS, /WE, /LB, /UB are low level, time
when /LB or /UB changes from low level to
high level
Write end pattern 2
L
L
L to H
5.
Definition of write end recovery time (t
WR
)
1) Time from write end to address change start point, or from write end to /CS high level input point
2) When /CS, /LB, /UB are low level and continuously written to the identical address, time from /WE high
level input point to /WE low level input point
3) When /CS, /WE are low level and continuously written to the identical address, time from /LB or /UB
high level input point, whichever is later, to /LB or /UB low level input point, whichever is earlier.
4) When /CS is low level and continuously written to the identical address, time from write end to point at
which /WE , /LB, or /UB starts to change from high level to low level, whichever is earliest.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UPD4616112F9-B85LX-BC2 | 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION |
| UPD4616112F9-BC80-BC2 | 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT |
| UPD4616112 | 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT |
| UPD4616112-X | 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION |
| UPD4616112F9-BC90-BC2 | 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT |
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