參數(shù)資料
型號(hào)： UPD6P4BGS
廠商： NEC Corp.
英文描述： 4-BIT SINGLE-CHIP MICROCONTROLLER FOR INFRARED REMOTE CONTROL TRANSMISSION
中文描述： 4位單片機(jī)的紅外遙控傳輸
文件頁(yè)數(shù)： 13/32頁(yè)
文件大?。?/td> 187K
代理商： UPD6P4BGS
13
μ
PD6P4B
Data Sheet U13594EJ2V0DS00
3.2 Program Memory Writing Procedure
The program memory is written at high speed in the following procedure.
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10) Set the verify mode. If the data have been written to the program memory, proceed to (11). If not, repeat
steps (8) through (10).
(11) Additional writing of (number of times of writing in (8) through (10): X)
×
1 ms.
(12) Set the program inhibit mode.
(13) Input a pulse to the CLK pin four times to update the program memory address (+1).
(14) Repeat steps (8) through (13) up to the last address.
(15) Set the 0 clear mode of the program memory address.
(16) Change the voltages on the V
DD
and V
PP
pins to 5 V.
(17) Turn off power.
Pull down the pins not used to GND via resistor. Keep the CLK pin low.
Supply 5 V to the V
DD
pin. Keep the V
PP
pin low.
Supply 5 V to the V
PP
pin after waiting for 10
μ
s.
Wait for 2 ms until oscillation of the ceramic resonator connected across the X
IN
and X
OUT
pins stabilizes.
Set the program memory address 0 clear mode by using the mode setting pins.
Supply 6 V to V
DD
and 12.5 V to V
PP
.
Set the program inhibit mode.
Write data to the program memory in the 1-ms write mode.
Set the program inhibit mode.
The following figure illustrates steps (2) through (13) above.
Repeated X time
Reset
Oscillation stabilization
wait time
Write
Verify
Additional write
Address
increment
Data input
Hi-Z
Hi-Z
Hi-Z
Data output
Data input
Hi-Z
V
PP
V
DD
GND
V
DD
+1
V
DD
GND
CLK
V
PP
V
DD
D
0
-D
7
MD
0
MD
1
MD
2
MD
3
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