
CHAPTER 26 ELECTRICAL SPECIFICATIONS
User
’
s Manual U15862EJ3V0UD
739
Flash Memory Programming Characteristics
(T
A
= +10 to
+
40
°
C, V
DD
= EV
DD
= AV
REF0
= 2.7 to 5.5 V, 2.7 V
≤
BV
DD
≤
V
DD
, 2.7 V
≤
AV
REF1
≤
V
DD
, V
SS
= EV
SS
= BV
SS
=
AV
SS
= 0 V)
(1) Basic characteristics
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Programming operation
frequency
2
10
MHz
V
PP
supply voltage
V
PP2
During flash memory programming
9.7
10.0
10.3
V
V
DD
supply current
I
DD
When V
PP
= V
PP2
, f
XX
= 10 MHz, V
DD
=
5.5 V
60
mA
V
PP
supply current
I
PP
When V
PP
= V
PP2
100
mA
Step erase time
t
ER
Note 1
0.196
0.2
0.204
s
Overall erase time
t
ERA
When step erase time = 0.2 s,
Note 2
20
s/area
Writeback time
t
WB
Note 3
4.9
5.0
5.1
ms
Number of writebacks
C
WB
When writeback time = 1 ms,
Note 4
100
Times
Number of erases/writebacks
C
ERWB
16
Times
Step write time
t
WR
Note 5
49
50
51
μ
s
Overall write time per word
t
WRW
When step write time = 50
μ
s (1 word =
4 byte),
Note 6
49
510
μ
s/word
Number of rewrites per area
C
ERWR
1 erase + 1 write after erase = 1 rewrite,
Note 7
20
Count/area
Notes 1.
The recommended setting value of the step erase time is 0.2 s.
2.
The prewrite time prior to erasure and the erase verify time (writeback time) are not included.
3.
The recommended setting value of the writeback time is 5.0 ms.
4.
Writeback is executed once by the issuance of the writeback command. Therefore, the retry count must be
the maximum value minus the number of commands issued.
5.
The recommended setting value of the step writing time is 50
μ
s.
6.
100
μ
s is added to the actual writing time per word. The internal verify time during and after the writing is
not included.
7.
When writing initially to shipped products, it is counted as one rewrite for both
“
erase to write
”
and
“
write
only
”
.
Example
(P: Write, E: Erase)
Shipped product
Shipped product
→
E
→
P
→
E
→
P
→
E
→
P: 3 rewrites
→
P
→
E
→
P
→
E
→
P: 3 rewrites