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參數(shù)資料
| 型號(hào)： | UPD75P3018GK-BE9 |
| 廠商： | NEC Corp. |
| 元件分類： | 4位微控制器 |
| 英文描述： | 4-BIT SINGLE-CHIP MICROCONTROLLER FOR SMALL GENERAL-PURPOSE INFRARED REMOTE CONTROL TRANSMITTER |
| 中文描述： | 4位單片機(jī)的小型通用紅外遙控器 |
| 文件頁數(shù)： | 15/40頁 |
| 文件大?。?/td> | 320K |
| 代理商： | UPD75P3018GK-BE9 |
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15
μ
PD75P048
3.2 PROM WRITE PROCEDURE
PROMs can be written at high speed using the following procedure: (see the following figure)
(1) Pull unused pins to V
SS
through resistors. Set the X1 pin low.
(2) Supply 5 volts to the V
DD
and V
PP
pins.
(3) Wait for 10
μ
s.
(4) Select the zero clear program memory address mode.
(5) Supply 6 volts to the V
DD
and 12.5 volts to the V
PP
pins.
(6) Select the program inhibit mode.
(7) Write data in the 1 ms write mode.
(8) Select the program inhibit mode.
(9) Select the verify mode. If the data is correct, proceed to step (10). If not, repeat steps (7), (8) and (9).
(10) Perform one additional write (duration of 1 ms
×
number of writes at (7) to (9)).
(11) Select the program inhibit mode.
(12) Apply four pulses to the X1 pin to increment the program memory address by one.
(13) Repeat steps (7) to (12) until the end address is reached.
(14) Select the zero clear program memory address mode.
(15) Return the V
DD
and V
PP
pins back to + 5 volts.
(16) Turn off the power.
The following figure shows steps (2) to (12).
MD0
(P30)
V
PP
V
PP
V
DD
V
DD
+1
V
DD
V
DD
X1
Input data
Output
data
Input data
P40-P43
P50-P53
MD1
(P31)
MD2
(P32)
MD3
(P33)
Write
Verify
Additional write
Address
increment
X repetition
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