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參數(shù)資料
| 型號： | UPD784214AYGF |
| 廠商： | NEC Corp. |
| 元件分類： | 圓形連接器 |
| 英文描述： | Circular Connector; No. of Contacts:3; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:14S; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:14S-12 RoHS Compliant: No |
| 中文描述： | 16位單晶片微控制器 |
| 文件頁數(shù)： | 8/100頁 |
| 文件大小： | 561K |
| 代理商： | UPD784214AYGF |
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Data Sheet U14121EJ2V0DS00
8
μ
PD784214A, 784215A, 784216A, 784217A, 784218A, 784214AY, 784215AY, 784216AY, 784217AY, 784218AY
1. DIFFERENCES AMONG MODELS IN
μ
PD784216A, 784216AY/784218A, 784218AY
SUBSERIES
The only difference among the
μ
PD784214A, 784215A, 784216A, 784217A, and 784218A lies in the internal
memory capacity.
The
μ
PD784214AY, 784215AY, 784216AY, 784217AY, and 784218AY are models with the addition of an I
2
C bus
control function.
The
μ
PD78F4216A, 78F4216AY, 78F4218A, and 78F4218AY are provided with a 128 KB/256 KB flash memory
instead of the mask ROM of the above models.
These differences are summarized in Table 1-1.
Table 1-1. Differences Among Models in
μ
PD784216A, 784216AY/784218A, 784218AY Subseries
Part Number
Item
μ
PD784214A,
μ
PD784214AY
μ
PD784215A,
μ
PD784215AY
μ
PD784216A,
μ
PD784216AY
μ
PD784217A,
μ
PD784217AY
μ
PD784218A,
μ
PD784218AY
μ
PD78F4216A,
μ
PD78F4216AY
μ
PD78F4218A,
μ
PD78F4218AY
Internal ROM
96 KB
(Mask
ROM)
128 KB (Mask ROM)
192 KB
(Mask
ROM)
256 KB
(Mask
ROM)
128 KB
(Flash
memory)
256 KB
(Flash
memory)
Internal RAM
3,584 bytes
5,120 bytes
8,192 bytes
12,800 bytes
5,120 bytes
12,800
bytes
Internal memory size
switching register
(IMS)
Not provided
Provided
Note
ROM correction
Not provided
Provided
Not
provided
Provided
External access status
function
Not provided
Provided
Not
provided
Provided
Supply voltage
V
DD
= 1.8 to 5.5 V
V
DD
= 1.9 to 5.5 V
Electrical
specifications
Recommended
soldering conditions
Refer to the data sheet for each device.
EXA pin
Not provided
Provided
Not
provided
Provided
TEST pin
Provided
Not provided
V
PP
pin
Not provided
Provided
Note
The internal flash memory capacity and internal RAM capacity can be changed using the internal memory
size switching register (IMS).
Caution There are differences in noise immunity and noise radiation between the flash memory and mask
ROM versions. When pre-producing an application set with the flash memory version and then
mass-producing it with the mask ROM version, be sure to conduct sufficient evaluations on the
commercial samples (not engineering samples) of the mask ROM version.
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