參數(shù)資料
型號(hào): UPG2008TB-E3
廠商: NEC Corp.
英文描述: GaAs INTEGRATED CIRCUIT
中文描述: 砷化鎵集成電路
文件頁(yè)數(shù): 1/10頁(yè)
文件大?。?/td> 60K
代理商: UPG2008TB-E3
DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
L, S-BAND SPDT SWITCH
GaAs INTEGRATED CIRCUIT
μ
PG2008TB
Document No. PG10193EJ01V0DS (1st edition)
Date Published November 2002 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices 2002
DESCRIPTION
The
μ
PG2008TB is an L, S-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for
digital cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz
to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin super minimold package that is smaller than
usual 6-pin minimold easy to install and contributes to miniaturizing the system.
FEATURES
Low insertion loss
: L
INS
= 0.3 dB TYP. @ V
cont
= +3.0 V/0 V, f = 1 GHz
L
INS
= 0.4 dB TYP. @ V
cont
= +3.0 V/0 V, f = 2 GHz
: ISL = 27 dB TYP. @ V
cont
= +3.0 V/0 V, f = 0.5 to 2.0 GHz
6-pin super minimold package (2.0
×
1.25
×
0.9 mm)
High isolation
APPLICATION
L, S-band digital cellular or cordless telephone
Buletooth
TM
, W-LAN and WLL applications
ORDERING INFORMATION
Part Number
Package
Marking
Supplying Form
μ
PG2008TB-E3
6-pin super minimold
G3D
Embossed tape 8 mm wide
Pin 1, 2, 3 face the perforation side of the tape
Qty 3 kpcs/reel
Remark
To order evaluation samples, contact your nearby sales office.
Part number for sample order:
μ
PG2008TB
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