參數(shù)資料
型號(hào): US5L12
廠商: Rohm CO.,LTD.
英文描述: General purpose transistor (isolated transistor and diode)
中文描述: 通用晶體管(孤立的晶體管和二極管)
文件頁(yè)數(shù): 2/5頁(yè)
文件大?。?/td> 80K
代理商: US5L12
US5L12
Transistors
z
Absolute maximum ratings
(Ta=25
°
C)
Tr1
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Pc
Tj
Tstg
40 to
+
125
°
C
1
Single pulse, Pw=1ms.
2
Mounted on a 25mm
×
25mm
×
t
0.8mm ceramic substrate
Di2
Parameter
Symbol
V
RM
20
mA
A
W/ELEMENT
°
C
°
C
Range of storage temperature
Rev.A
2/4
Limits
30
30
6
1
2
0.7
150
2
1
Unit
V
V
V
A
A
W/ELEMENT
°
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
I
F
I
FSM
P
D
Tj
Tstg
V
R
Limits
25
700
3
0.5
125
40 to
+
125
Unit
V
V
Mounted on a 25mm
×
25mm
×
t
0.8mm ceramic substrate
Average rectified forward current
F
orward current surge peak (60H
Z
,
1
)
Power dissipation
Reverse voltage (DC)
Junction temperature
Peak reverse voltage
Tr1& Di2
Parameter
Symbol
P
D
Limits
0.4
1.0
Unit
W/TOTAL
W/TOTAL
1
2
1
Each terminal mounted on a recommended land
2
Mounted on a 25mm
×
25mm
×
t
0.8mm ceramic substrate
Total power dissipation
z
Electrical characteristics
(Ta=25
°
C)
Tr1
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Pulsed
Di2
Parameter
Forward voltage
Reverse current
Reverse recovery time
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
Min.
30
30
6
270
Typ.
120
Max.
100
100
350
680
Unit
V
V
V
nA
nA
mV
Conditions
V
CB
=
10V, I
E
=
0A, f
=
1MHz
f
T
320
7
MHz
pF
V
CE
=
2V, I
E
=
100mA, f
=
100MHz
I
C
=
10
μ
A
I
C
=
1mA
I
E
=
10
μ
A
V
CB
=
30V
V
EB
=
6V
I
C
=
500mA, I
B
=
25mA
V
CE
=
2V, I
C
=
100mA
Cob
Min.
Typ.
450
9
Max.
490
200
Unit
mV
μ
A
ns
Conditions
I
F
=700mA
V
R
=20V
I
F
=I
R
=100mA, Irr=0.1I
R
Symbol
V
F
I
R
trr
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