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參數資料
| 型號： | UT61256C |
| 英文描述： | ASYNCHRONOUS STATIC RAM- High Speed |
| 中文描述： | 異步靜態(tài)RAM高速 |
| 文件頁數： | 8/12頁 |
| 文件大?。?/td> | 96K |
| 代理商： | UT61256C |
UTRON
UT61256C
Rev. 1.4
32K X 8 BIT HIGH SPEED CMOS SRAM
UTRON TECHNOLOGY INC.
P80031
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
5
CAPACITANCE (TA=25J , f=1.0MHz)
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
Input Capacitance
CIN
-
8
pF
Input/Output Capacitance
CI/O
-
10
pF
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
Input Pulse Levels
0V to 3.0V
Input Rise and Fall Times
3ns
Input and Output Timing Reference Levels
1.5V
Output Load
CL=30pF, IOH/IOL=-4mA/8mA
AC ELECTRICAL CHARACTERISTICS (V
CC = 5V
10% , TA = 0J to 70J )
(1) READ CYCLE
UT61256C
-8
UT61256C
-10
UT61256C
-12
UT61256C
-15
PARAMETER
SYMBOL
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
UNIT
Read Cycle Time
tRC
8
-
10
-
12
-
15
-
ns
Address Access Time
tAA
-
8
-
10
-
12
-
15
ns
Chip Enable Access Time
tACE
-
8
-
10
-
12
-
15
ns
Output Enable Access Time
tOE
-
4
-
5
-
6
-
7
ns
Chip Enable to Output in Low Z
tCLZ*
2
-
2
-
3
-
4
-
ns
Output Enable to Output in Low Z
tOLZ*
0
-
0
-
0
-
0
-
ns
Chip Disable to Output in High Z
tCHZ*
-
4
-
5
-
6
-
7
ns
Output Disable to Output in High Z
tOHZ*
-
4
-
5
-
6
-
7
ns
Output Hold from Address Change
tOH
3
-
3
-
3
-
3
-
ns
(2) WRITE CYCLE
UT61256C
-8
UT61256C
-10
UT61256C
-12
UT61256C
-15
PARAMETER
SYMBOL
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
UNIT
Write Cycle Time
tWC
8
-
10
-
12
-
15
-
ns
Address Valid to End of Write
tAW
6.5
-
8
-
10
-
12
-
ns
Chip Enable to End of Write
tCW
6.5
-
8
-
10
-
12
-
ns
Address Set-up Time
tAS
0
-
0
-
0
-
0
-
ns
Write Pulse Width
tWP
6.5
-
8
-
9
-
10
-
ns
Write Recovery Time
tWR
0
-
0
-
0
-
0
-
ns
Data to Write Time Overlap
tDW
5
-
6
-
7
-
8
-
ns
Data Hold from End of Write Time
tDH
0
-
0
-
0
-
0
-
ns
Output Active from End of Write
tOW*
1.5
-
2
-
3
-
4
-
ns
Write to Output in High Z
tWHZ*
5
-
6
-
7
-
8
ns
*These parameters are guaranteed by device characterization, but not production tested.
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