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參數(shù)資料
| 型號： | UT7Q512-UPA |
| 元件分類： | SRAM |
| 英文描述： | 512K X 8 STANDARD SRAM, 100 ns, CDFP32 |
| 封裝： | CERAMIC, FP-32 |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 142K |
| 代理商： | UT7Q512-UPA |
6
AC CHARACTERISTICS READ CYCLE (Pre/Post-Radiation)*
(VDD = 5.0V±10%) (-55°C to +125°C)
Notes: * Post-radiation performance guaranteed at 25
°C per MIL-STD-883 Method 1019.
1. Functional test.
2. Three-state is defined as a 500mV change from steady-state output voltage.
3. The ET (enable true) notation refers to the falling edge of E1. SEU immunity does not affect the read parameters.
4. The EF (enable false) notation refers to the rising edge of E1. SEU immunity does not affect the read parameters.
SYMBOL
PARAMETER
MIN
MAX
UNIT
tAVAV
1
Read cycle time
100
ns
tAVQV
Read access time
100
ns
tAXQX
2
Output hold time
10
ns
tGLQX
2
G-controlled Output Enable time
5
ns
tGLQV
G-controlled Output Enable time (Read Cycle 3)
50
ns
tGHQZ
2
G-controlled output three-state time
30
ns
tETQX
2,3
E1-controlled Output Enable time
10
ns
tETQV
3
E1-controlled access time
100
ns
tEFQZ
1,2,4
E1-controlled output three-state time
30
ns
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