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參數(shù)資料
| 型號(hào)： | UTCBT169 |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | SCR |
| 中文描述： | 可控硅 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 35K |
| 代理商： | UTCBT169 |
UTC BT169
SCR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
2
PARAMETER
SYMBOL
P
GM
P
G(AV)
Tstg
Tj
CONDITIONS
MIN
MAX
2
0.1
150
125
UNIT
W
W
°
C
°
C
Peak gate power
Average gate power
Storage temperature
Operating junction temperature
Over any 20 ms period
-40
THERMAL RESISTANCES
PARAMETER
Thermal resistance junction to lead
Thermal resistance junction to
ambient
SYMBOL
Rth j-lead
Rth j-a
CONDITIONS
MIN
TYP
MAX
60
UNIT
K/W
K/W
pcb mounted;
lead length=4mm
150
ELECTRICAL CHARACTERISTICS
(Tj=25
°
C unless otherwise stated)
PARAMETER
SYMBOL
STATIC
Gate trigger current
CONDITIONS
MIN
TYP
MAX
UNIT
I
GT
V
D
=12V;IT=10mA;gate
open circuit
V
D
=12V;I
GT
=0.5mA;
R
GK
=1k
V
D
=12V;I
GT
=0.5mA;
R
GK
=1k
I
T
=1A
V
D
=12V;I
T
=10mA;
gate open circuit
V
D
=V
DRM(max) ;IT=10mA ;
Tj=125
°
C; gate open circuit
V
D
=V
DRM(max)
;V
R
=V
RRM(m
ax)
;Tj=125
°
C;R
GK
=1k
50
200
μ
A
Latching current
I
L
2
6
mA
Holding current
I
H
2
5
mA
On-state voltage
Gate trigger voltage
V
T
V
GT
1.2
0.5
1.35
0.8
V
V
0.2
0.3
Off-state leakage current
I
D
,I
R
0.05
0.1
mA
DYNAMIC
Ciritical rate of rise of off-state
voltage
dV
D
/dt
V
DM
=67% V
DRM(max)
;
Tj=125
°
C; exponential
waveform;R
GK
=1k
I
TM
=2A;V
D
=V
DRM
(max);
I
G
=10mA;dI
G
/dt=0.1A/
μ
s
V
D
=67% V
DRM(max)
;
Tj=125
°
C;I
TM
=1.6A;V
R
=35V
;dI
TM
/dt=30A/
μ
s;
V
D
/dt=2V/
μ
s;R
GK
=1k
25
V/
μ
s
Gate controlled turn-on time
t
gt
2
μ
s
Circuit commutated turn-off time
tq
100
μ
s
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