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參數資料
| 型號： | UTCBT169 |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | SCR |
| 中文描述： | 可控硅 |
| 文件頁數： | 3/4頁 |
| 文件大?。?/td> | 35K |
| 代理商： | UTCBT169 |
UTC BT169
SCR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
3
0
0.1
0.2
0.3
IF(AV) / A
0.4
0.5
0.6
0.7
0.1
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
119
125
113
107
101
95
89
83
77
conduction
angle
degrees
form
factor
a
4
2.8
2.2
1.9
1.57
30
60
90
120
180
4
2.8
2.2
1.9
a=1.57
Tc(max) / C
FIG.1 Maximum on-state dissipation, P
on-state current, I
T(AV)
, where a=form factor=I
T(RMS)
/ I
T(AV)
tot
, versus average
P
tot
/ W
10
μ
s
1
10
100
1000
T / s
FIG.2 Maximum permissible non-repetitive peak on-state current
I
TSM
,versus pulse width tp,for sinusoidal currents, t
IT(RMS) / A
p
<=10ms.
ITSM / A
100
μ
s
1ms
10ms
I
TSM
I
T
time
Tj initial=25
￠ X
C max
T
0
50
100
150
0.2
0.4
0.6
0.8
1.0
Tlead / C
FIG.3 Maximum permissible rms current I
lead temperature, Tlead
T(RMS)
, versus
-50
0
83
￠ X
C
1
0
2
4
Number of half cycles at 50Hz
FIG.4 Maximnum permissible non-repetitive peak on-state current
I
TSM
, versus number of cycles, for sinusoidal currents, f = 50Hz.
ITSM / A
10
100
1000
I
TSM
I
T
time
Tj initial=25
￠ X
C max
T
6
8
10
0.01
0
0.5
1.0
surge duration / s
FIG.5 Maximum permissible repetitive rms on-state current I
versus surge duration, for sinusoidal currents, f= 50Hz; Tlead<=83
￠ X
C
VGT(Tj)
VGT(25
￠ X
C)
T(RMS)
,
IT(RMS) / A
0.1
1.0
10
1.5
2.0
0.4
50
100
150
0.6
0.8
1.0
1.4
1.6
Tj / C
FIG.6 Normalised gate trigger voltage V
versus junction temperature Tj
GT
(Tj)/V
GT(
25
￠ X
C),
-50
0
1.2
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