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參數(shù)資料
| 型號： | UZTX751 |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92 COMPATIBLE, E-LINE PACKAGE-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 127K |
| 代理商： | UZTX751 |
PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE
3 – JULY 2005
FEATURES
*
60 Volt V
CEO
*
2 Amp continuous current
*
Low saturation voltage
*P
tot= 1 Watt
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
ZTX750
ZTX751
UNIT
Collector-Base Voltage
V
CBO
-60
-80
V
Collector-Emitter Voltage
V
CEO
-45
-60
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-6
A
Continuous Collector Current
I
C
-2
A
Power Dissipation: at T
amb=25°C
derate above 25°C
P
tot
1
5.7
W
mW/°C
Operating and Storage Temperature Range
T
j:Tstg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
ZTX750
ZTX751
UNIT CONDITIONS.
MIN.
TYP.
MAX. MIN.
TYP.
MAX.
Collector-Base
Breakdown
Voltage
V
(BR)CBO
-60
-80
V
I
C=-100A
Collector-Emitter
Breakdown
Voltage
V
(BR)CEO
-45
-60
V
I
C=-10mA
Emitter-Base
Breakdown
Voltage
V
(BR)EBO
-5
V
I
E=-100A
Collector Cut-Off
Current
I
CBO
-0.1
-10
-0.1
-10
A
V
CB=-45V
V
CB=-60V
V
CB=-45V,Tamb=100°C
V
CB=-60V,Tamb=100°C
Emitter Cut-Off
Current
I
EBO
-0.1
A
V
EB=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.15
-0.28
-0.3
-0.5
-0.15
-0.28
-0.3
-0.5
V
I
C=-1A, IB=-100mA
I
C=-2A, IB=-200mA
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.9
-1.25
-0.9
-1.25
V
I
C=-1A, IB=-100mA
Base-Emitter
Turn-On Voltage
V
BE(on)
-0.8
-1
-0.8
-1
V
IC=-1A, V
CE=-2V
Static Forward
Current Transfer
Ratio
h
FE
70
100
80
40
200
170
80
300
70
100
80
40
200
170
80
300
I
C=-50mA, VCE=-2V*
I
C=-500mA,VCE=-2V*
I
C=-1A, VCE=-2V*
I
C=-2A, VCE=-2V*
Switching Times
t
on
45
I
C=500mA, VCC=10V
I
B1=IB2=50mA
t
off
800
Output Capacitance
C
obo
30
pF
V
CB=10V f=1MHz
ZTX750
ZTX751
3-257
C
B
E
E-Line
TO92 Compatible
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
ZTX750
ZTX751
UNIT CONDITIONS.
MIN.
TYP.
MAX
.
MIN.
TYP.
MAX
.
Transition
Frequency
f
T
100
140
100
140
MHz
I
C=-100mA, VCE=-5V
f=100MHz
Switching Times
t
on
40
ns
I
C=-500mA,
V
CC=-10V
I
B1=IB2=-50mA
t
off
450
ns
Output
Capacitance
C
obo
30
pF
V
CB=10V f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle 2%
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX.
UNIT
Thermal Resistance:Junction to Ambient
1
Junction to Ambient
2
Junction to Case
R
th(j-amb)1
R
th(j-amb)2
R
th(j-case)
175
116
70
°C/W
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
ZTX750
ZTX751
-40
0.0001
Derating curve
T -Temperature (°C)
M
ax
Po
w
e
rD
is
sipat
io
n
-(
W
a
tts)
Maximum transient thermal impedance
Pulse Width (seconds)
T
h
e
rm
a
lR
esis
ta
nce
(
°C/
W
)
10
100
1
0.1
0.01
-20
0
20 40
60 80 100 120
200
180
160
140
0.001
0
100
200
D=0.2
D=0.1
Single Pulse
D=0.5
t1
tP
D=t1/tP
1.0
0.5
2.0
1.5
Case
temperature
2.5
Ambient
temperat
ure
0
D=1 (D.C.)
3-258
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