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| 型號(hào)： | UZVP4525GTC |
| 廠商： | DIODES INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 265 mA, 250 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SOT-223, 4 PIN |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 319K |
| 代理商： | UZVP4525GTC |
ZVP4525G
SEMICO NDUC TORS
ISSUE 4 - JUNE 2004
2
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to ambient
(a)
RθJA
63
°C/W
Junction to ambient
(b)
RθJA
26
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-source voltage
VDSS
250
V
Gate source voltage
VGS
±40
V
Continuous drain current
(VGS=10V; TA=25°C)
(a)
(VGS=10V; TA=70°C)
(a)
ID
-265
-212
mA
Pulsed drain current
(c)
IDM
-1
A
Continuous source current (body diode)
IS
-0.75
A
Pulsed source current (body diode)
ISM
-1
A
Power dissipation at TA=25°C
(a)
Linear derating factor
PD
2
16
W
mW/°C
Operating and storage temperature range
Tj:Tstg
-55 to +150
°C
NB High voltage applications
For high voltage applications, the appropriate industry sector guidelines should be considered with regard to
voltage spacing between conductors.
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