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| 型號： | UZVP4525GTC |
| 廠商： | DIODES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 265 mA, 250 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SOT-223, 4 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 319K |
| 代理商： | UZVP4525GTC |
ZVP4525G
SEMICO NDUC TORS
ISSUE 4 - JUNE 2004
4
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS
STATIC
Drain-source breakdown voltage
V(BR)DSS -250
-285
V
ID=-1mA, VGS=0V
Zero gate voltage drain current
IDSS
-30
-500
nA
VDS=-250V, VGS=0V
Gate-body leakage
IGSS
±1
±100
nA
VGS=±40V, VDS=0V
Gate-source threshold voltage
VGS(th)
-0.8
-1.5
-2.0
V
I
D
=-1mA, VDS=VGS
Static drain-source on-state resistance
(1)
RDS(on)
10
13
14
18
VGS=-10V, ID=-200mA
VGS=-3.5V,
ID=-100mA
Forward transconductance
(3)
gfs
80
200
mS
VDS=-10V,ID=-0.15A
DYNAMIC
(3)
Input capacitance
Ciss
73
pF
VDS=-25 V, VGS=0V,
f=1MHz
Output capacitance
Coss
12.8
pF
Reverse transfer capacitance
Crss
3.91
pF
SWITCHING
(2) (3)
Turn-on delay time
td(on)
1.53
ns
VDD =-30V, ID=-200mA
RG=50,VGS=-10V
(refer to test circuit)
Rise time
tr
3.78
ns
Turn-off delay time
td(off)
17.5
ns
Fall time
tf
7.85
ns
Total gate charge
Qg
2.45
3.45
nC
VDS=-25V,VGS=-10V,
ID=-200mA(refer to
test circuit)
Gate-source charge
Qgs
0.22
0.31
nC
Gate drain charge
Qgd
0.45
0.63
nC
SOURCE-DRAIN DIODE
Diode forward voltage
(1)
VSD
0.97
V
Tj=25°C, IS=-200mA,
VGS=0V
Reverse recovery time
(3)
trr
205
290
ns
Tj=25°C, IF=-200mA,
di/dt= 100A/
s
Reverse recovery charge
(3)
Qrr
21
29
nC
NOTES:
(1) Measured under pulsed conditions. Width=300
s. Duty cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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