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參數(shù)資料
| 型號(hào)： | V53C16126HT40 |
| 廠商： | Mosel Vitelic, Corp. |
| 英文描述： | DRAM|FAST PAGE|128KX16|CMOS|TSOP|44PIN|PLASTIC |
| 中文描述： | 內(nèi)存|快速頁面| 128KX16 |的CMOS |的TSOP | 44PIN |塑料 |
| 文件頁數(shù)： | 16/18頁 |
| 文件大?。?/td> | 136K |
| 代理商： | V53C16126HT40 |
16
V53C16126H Rev. 1.3 February 1998
MOSEL V ITELIC
V53C16126H
Fast Page Mode Operation
Fast Page Mode operation permits all 256
columns within a selected row of the device to be
randomly accessed at a high data rate. Maintaining
RAS low while performing successive CAS cycles
retains the row address internally and eliminates
the need to reapply it for each cycle. The column
address buffer acts as a transparent or flow-
through latch while CAS is high. Thus, access
begins from the occurrence of a valid column
address rather than from the falling edge of CAS,
eliminating t
ASC
and t
T
from the critical timing path.
CAS latches the address into the column address
buffer and acts as an output enable. During Fast
Page Mode operation, Read, Write, Read-Modify-
Write or Read-Write-Read cycles are possible at
random addresses within a row. Following the initial
entry cycle into Fast Page Mode, access is t
CAA
or
t
CAP
controlled. If the column address is valid prior
to the rising edge of CAS, the access time is
referenced to the CAS rising edge and is
specified by t
CAP
. If the column address is valid
after the rising CAS edge, access is timed from
the occurrence of a valid address and is specified
by t
CAA
. In both cases, the falling edge of CAS
latches the address and enables the output.
Fast Page Mode provides sustained data rates
up to 53 MHz for applications that require high data
rates such as bit-mapped graphics or high-speed
signal processing. The following equation can be
used to calculate the maximum data rate:
Data Output Operation
The V53C16126H Input/Output is controlled by
OE, CAS, WE and RAS. A RAS low transition
enables the transfer of data to and from the
selected row address in the Memory Array. A RAS
high transition disables data transfer and latches
the output data if the output is enabled. After a
memory cycle is initiated with a RAS low transition,
a CAS low transition or CAS low level enables the
internal I/O path. A CAS high transition or a CAS
high level disables the I/O path and the output
driver if it is enabled. A CAS low transition while
RAS is high has no effect on the I/O data path or on
the output drivers. The output drivers, when
otherwise enabled, can be disabled by holding OE
high. The OE signal has no effect on any data
stored in the output latches. A WE low level can
also disable the output drivers when CAS is low.
During a Write cycle, if WE goes low at a time in
relationship to CAS that would normally cause the
outputs to be active, it is necessary to use OE to
disable the output drivers prior to the WE low
transition to allow Data In Setup Time (t
DS
) to be
satisfied.
Power-On
After application of the V
CC
supply, an initial
pause of 200
μ
s is required followed by a minimum
of 8 initialization cycles (any combination of cycles
containing a RAS clock). Eight initialization cycles
are required after extended periods of bias without
clocks (greater than the Refresh Interval).
During Power-On, the V
CC
current requirement
of the V53C16126H is dependent on the input
levels of RAS and CAS. If RAS is low during
Power-On, the device will go into an active cycle
and I
DD
will exhibit current transients. It is
recommended that RAS and CAS track with V
CC
or
be held at a valid V
IH
during Power-On to avoid
current surges.
Table 1. V53C16126H Data Output
Operation for Various Cycle Types
Data Rate
255
t
RC
t
PC
×
+
----------------------------------------
=
Cycle Type
I/O State
Read Cycles
Data from Addressed
Memory Cell
CAS-Controlled Write Cycle
(Early Write)
High-Z
WE-Controlled Write Cycle
(Late Write)
OE Controlled.
High OE = High-Z I/Os
Read-Modify-Write Cycles
Data from Addressed
Memory Cell
Fast Page Mode Read
Data from Addressed
Memory Cell
Fast Page Mode Write Cycle
(Early Write)
High-Z
Fast Page Mode Read-Modify-
Write Cycle
Data from Addressed
Memory Cell
RAS-only Refresh
High-Z
CAS-before-RAS Refresh Cycle
Data remains as in
previous cycle
CAS-only Cycles
High-Z
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