參數(shù)資料
型號: V53C16126HT50
廠商: Mosel Vitelic, Corp.
英文描述: DRAM|FAST PAGE|128KX16|CMOS|TSOP|44PIN|PLASTIC
中文描述: 內存|快速頁面| 128KX16 |的CMOS |的TSOP | 44PIN |塑料
文件頁數(shù): 6/18頁
文件大小: 136K
代理商: V53C16126HT50
6
V53C16126H Rev. 1.3 February 1998
MOSEL V ITELIC
V53C16126H
29
t
WP
Write Pulse Width
5
5
5
6
7
ns
30
t
WCR
Write Command Hold Time
from RAS
26
28
30
35
40
ns
31
t
RWL
Write Command to RAS
Lead Time
10
11
12
13
14
ns
32
t
DS
Data in Setup Time
0
0
0
0
0
ns
14
33
t
DH
Data in Hold Time
5
5
5
6
7
ns
14
34
t
WOH
Write to OE Hold Time
5
5
6
7
8
ns
14
35
t
OED
OE to Data Delay Time
5
5
6
7
8
ns
14
36
t
RWC
Read-Modify-Write Cycle Time
100
105
110
115
130
ns
37
t
RRW
Read-Modify-Write Cycle
RAS Pulse Width
65
70
75
80
87
ns
38
t
CWD
CAS to WE Delay
26
28
30
32
34
ns
12
39
t
RWD
RAS to WE Delay in Read-
Modify-Write Cycle
50
54
58
62
68
ns
12
40
t
CRW
CAS Pulse Width (RMW)
44
46
48
50
52
ns
41
t
AWD
Col. Address to WE Delay
32
35
38
41
42
ns
12
42
t
PC
Fast Page Mode Read
or Write Cycle Time
19
21
23
25
28
ns
43
t
CP
CAS Precharge Time
3
4
5
6
7
ns
44
t
CAR
Column Address to RAS
Setup Time
16
18
20
22
24
ns
45
t
CAP
Access Time from Column
Precharge
19
21
23
25
27
ns
7
46
t
DHR
Data in Hold Time Referenced
to RAS
26
28
30
35
40
ns
47
t
CSR
CAS Setup Time CAS- before-
RAS Refresh
10
10
10
10
10
ns
48
t
RPC
RAS to CAS Precharge Time
0
0
0
0
0
ns
49
t
CHR
CAS Hold Time CAS-before-
RAS Refresh
7
8
8
10
12
ns
50
t
PCM
Fast Page Mode Read-Modify-
Write Cycle Time
56
58
60
65
70
ns
51
t
T
Transition Time (Rise and Fall)
1.5
50
1.5
50
1.5
50
1.5
50
1.5
50
ns
15
52
t
REF
Refresh Interval (512 Cycles)
8
8
8
8
8
ms
17
#
Symbol
Parameter
30
35
40
45
50
Unit
Notes
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
AC Characteristics
(Cont’d)
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