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參數(shù)資料
| 型號： | V53C1668H |
| 廠商： | Mosel Vitelic, Corp. |
| 英文描述： | High Performance 64K X 16 Bit EDO Page Mode Dual CAS CMOS Dynamic RAM(高性能64Kx16EDO頁面模式雙CAS輸入CMOS動態(tài)RAM) |
| 中文描述： | 高性能64K的× 16位EDO公司頁面模式雙中科院的CMOS動態(tài)RAM（高性能64Kx16EDO頁面模式雙中科院輸入的CMOS動態(tài)內(nèi)存） |
| 文件頁數(shù)： | 17/20頁 |
| 文件大?。?/td> | 160K |
| 代理商： | V53C1668H |
17
V53C1668H Rev. 1.1 February 1999
MOSEL V ITELIC
V53C1668H
processing. The following equation can be used to
calculate the maximum data rate:
Data Output Operation
The V53C1668H Input/Output is controlled by
OE, CAS, WE and RAS. A RAS low transition
enables the transfer of data to and from the
selected row address in the Memory Array. A RAS
high transition disables data transfer and latches
the output data if the output is enabled. After a
memory cycle is initiated with a RAS low transition,
a CAS low transition or CAS low level enables the
internal I/O path. A CAS high transition or a CAS
high level disables the I/O path and the output
driver if it is enabled. A CAS low transition while
RAS is high has no effect on the I/O data path or on
the output drivers. The output drivers, when
otherwise enabled, can be disabled by holding OE
high. The OE signal has no effect on any data
stored in the output latches. A WE low level can
also disable the output drivers when CAS is low.
During a Write cycle, if WE goes low at a time in
relationship to CAS that would normally cause the
outputs to be active, it is necessary to use OE to
disable the output drivers prior to the WE low
transition to allow Data In Setup Time (t
DS
) to be
satisfied.
Power-On
After application of the V
CC
supply, an initial
pause of 200
μ
s is required followed by a minimum
of 8 initialization cycles (any combination of cycles
containing a RAS clock). Eight initialization cycles
are required after extended periods of bias without
clocks (greater than the Refresh Interval).
During Power-On, the V
CC
current requirement
of the V53C1668H is dependent on the input levels
of RAS and CAS. If RAS is low during Power-On,
the device will go into an active cycle and I
CC
will
exhibit current transients. It is recommended that
RAS and CAS track with V
CC
or be held at a valid
V
IH
during Power-On to avoid current surges.
Table 1. V53C1668H Data Output
Operation for Various Cycle Types
Data Rate
255
t
RC
×
t
PC
×
----------------------------------------
=
Cycle Type
I/O State
Read Cycles
Data from Addressed
Memory Cell
CAS-Controlled Write Cycle
(Early Write)
High-Z
WE-Controlled Write Cycle
(Late Write)
OE Controlled.
High OE = High-Z I/Os
Read-Modify-Write Cycles
Data from Addressed
Memory Cell
EDO Page Mode Read
Data from Addressed
Memory Cell
EDO Page Mode Write Cycle
(Early Write)
High-Z
EDO Page Mode Read-Modify-
Write Cycle
Data from Addressed
Memory Cell
RAS-only Refresh
High-Z
CAS-before-RAS Refresh Cycle
Data remains as in
previous cycle
CAS-only Cycles
High-Z
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