參數(shù)資料
型號: V53C365165AT50L
廠商: MOSEL-VITELIC
元件分類: DRAM
英文描述: 4M X 16 EDO DRAM, 50 ns, PDSO50
封裝: 0.400 INCH, PLASTIC, TSOP2-50
文件頁數(shù): 23/26頁
文件大?。?/td> 168K
代理商: V53C365165AT50L
6
V53C365165A Rev. 1.1 March 1998
MOSEL VITELIC
V53C365165A
AC Characteristics (5,6)
TA = 0 to 70°C,VCC = 3.3 V ±0.3V , tT = 2 ns
#
Symbol
Parameter
-40
- 50
- 60
Unit
Notes
Min.
Max.
Min.
Max.
Min.
Max.
Common Parameters
1
tRC
Random read or write cycle time
69
84
104
ns
2
tRAS
RAS pulse width
40
100K
50
100K
60
100K
ns
3
tCAS
CAS pulse width
6
100K
8
100K
10
100K
ns
4
tRP
RAS precharge time
25
30
40
ns
5
tCP
CAS precharge time
6
8
10
ns
6
tASR
Row address setup time
0
0
0
ns
7
tRAH
Row address hold time
5
7
10
ns
8
tASC
Column address setup time
0
0
0
ns
9
tCAH
Column address hold time
5
7
10
ns
10
tRCD
RAS to CAS delay time
9
30
11
37
14
45
ns
11
tRAD
RAS to column address delay time
7
20
9
25
12
30
ns
12
tRSH
RAS hold time
6
8
10
ns
13
tCSH
CAS hold time
32
40
48
ns
14
tCRP
CAS to RAS precharge time
5
5
5
ns
15
tT
Transition time (rise and fall)
1
50
1
50
1
50
ns
7
16
tREF
Refresh period for 4k-refresh version
64
64
64
ms
17
tREF
Refresh period for L-versions
256
256
256
ms
Read Cycle
18
tRAC
Access time from RAS
40
50
60
ns
8, 9
19
tCAC
Access time from CAS
10
13
15
ns
8, 9
20
tCAA
Access time from column address
20
25
30
ns
8,10
21
tOEA
OE access time
10
13
15
ns
22
tRAL
Column address to RAS lead time
20
25
30
ns
23
tRCS
Read command setup time
0
0
0
ns
24
tRCH
Read command hold time
0
0
0
ns
11
25
tRRH
Read command hold time referenced
to RAS
0
0
0
ns
11
26
tCLZ
CAS to output in low-Z
0
0
0
ns
8
27
tOFF
Output buffer turn-off delay
0
10
0
13
0
15
ns
12
28
tOEZ
Output buffer turn-off delay from OE
0
10
0
13
0
15
ns
12
29
tDZC
Data to CAS low delay
0
0
0
ns
13
30
tDZO
Data to OE low delay
0
0
0
ns
13
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