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參數(shù)資料
| 型號(hào)： | V53C365165AT50L |
| 廠商： | MOSEL-VITELIC |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 4M X 16 EDO DRAM, 50 ns, PDSO50 |
| 封裝： | 0.400 INCH, PLASTIC, TSOP2-50 |
| 文件頁(yè)數(shù)： | 24/26頁(yè) |
| 文件大?。?/td> | 168K |
| 代理商： | V53C365165AT50L |
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V53C365165A Rev. 1.1 March 1998
MOSEL VITELIC
V53C365165A
31
tCDD
CAS high to data delay
10
—
13
—
15
—
ns
14
32
tODD
OE high to data delay
10
—
13
—
15
—
ns
14
Write Cycle
33
tWCH
Write command hold time
5
—
7
—
10
—
ns
34
tWP
Write command pulse width
5
—
7
—
10
—
ns
35
tWCS
Write command setup time
0
—
0
—
0
—
ns
15
36
tRWL
Write command to RAS lead time
6
—
8
—
10
—
ns
37
tCWL
Write command to CAS lead time
6
—
8
—
10
—
ns
38
tDS
Data setup time
0
—
0
—
0
—
ns
16
39
tDH
Data hold time
5
—
7
—
10
—
ns
16
Read-Modify-Write Cycle
40
tRWC
Read-write cycle time
89
—
109
—
133
—
ns
41
tRWD
RAS to WE delay time
52
—
65
—
77
—
ns
15
42
tCWD
CAS to
WE delay time
22
—
28
—
32
—
ns
15
43
tAWD
Column address to WE delay time
32
—
40
—
47
—
ns
15
44
tOEH
OE command hold time
5
—
7
—
10
—
ns
EDO Page Mode Cycle
45
tPC
EDO Page Mode cycle time
16
—
20
—
24
—
ns
46
tCPA
Access time from CAS precharge
—
22
—
27
—
32
ns
7
47
tCOH
Output data hold time
3
—
5
—
5
—
ns
48
tRAS
RAS pulse width in EDO page mode
40
200K
50
200K
60
200K
ns
49
tRHPC
CAS precharge to RAS Delay
22
—
27
—
32
—
ns
50
tOEP
OE pulse width
5
—
5
—
5
—
ns
51
tOEHC
OE hold time from CAS high
5
—
5
—
5
—
ns
52
tWEZ
Output buffer turn-off delay from WE
0
10
0
13
0
15
ns
53
tOES
OE setup time prior to CAS
5
—
5
—
5
—
ns
EDO Page Mode Read-Modify-Write Cycle
54
tPRWC
EDO page mode read-write cycle time
44
—
54
—
63
—
ns
55
tCPWD
CAS precharge to WE
34
—
42
—
49
—
ns
AC Characteristics (5,6) (Cont’d)
TA = 0 to 70°C,VCC = 3.3 V ±0.3V , tT = 2 ns
#
Symbol
Parameter
-40
- 50
- 60
Unit
Notes
Min.
Max.
Min.
Max.
Min.
Max.
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