參數(shù)資料
型號(hào): V53C516400A
廠商: Mosel Vitelic, Corp.
英文描述: 4M x 4 Fast Page Mode CMOS Dynamic RAM(4Mx4快速頁(yè)面模式CMOS動(dòng)態(tài)RAM)
中文描述: 4米× 4快速頁(yè)面模式的CMOS動(dòng)態(tài)RAM(4Mx4快速頁(yè)面模式的CMOS動(dòng)態(tài)內(nèi)存)
文件頁(yè)數(shù): 6/24頁(yè)
文件大小: 178K
代理商: V53C516400A
6
V53C516400A Rev. 1.1 March 1998
MOSEL V ITELIC
V53C516400A
Write Cycle
31
t
WCH
Write command hold time
8
10
ns
32
t
WP
Write command pulse width
8
10
ns
33
t
WCS
Write command setup time
0
0
ns
15
34
t
RWL
Write command to RAS lead time
13
15
ns
35
t
CWL
Write command to CAS lead time
13
15
ns
36
t
DS
Data setup time
0
0
ns
16
37
t
DH
Data hold time
8
10
ns
16
Read-modify-Write Cycle
38
t
RWC
Read-write cycle time
126
150
ns
39
t
RWD
RAS to WE delay time
68
80
ns
15
40
t
CWD
CAS to WE delay time
31
35
ns
15
41
t
AWD
Column address to WE delay time
43
50
ns
15
42
t
OEH
OE command hold time
13
15
ns
Fast Page Mode Cycle
43
t
PC
Fast Page mode cycle time
35
40
ns
44
t
CP
CAS precharge time
10
10
ns
45
t
CPA
Access time from CAS precharge
30
35
ns
7
46
t
RASP
RAS pulse width in Fast mode
50
200k
60
200k
ns
47
t
RHPC
CAS precharge to RAS Delay
30
35
ns
Fast Page Mode Read-modify-Write Cycle
48
t
PRWC
Fast Page mode read-write cycle time
71
80
ns
49
t
CPWD
CAS precharge to WE
48
55
ns
CAS-before-RAS Refresh Cycle
50
t
CSR
CAS setup time
10
10
ns
51
t
CHR
CAS hold time
10
10
ns
52
t
RPC
RAS to CAS precharge time
5
5
ns
53
t
WRP
Write to RAS precharge time
10
10
ns
54
t
WRH
Write hold time referenced to RAS
10
10
ns
CAS-before-RAS Counter Test Cycle
55
t
CPT
CAS precharge time
35
40
ns
AC Characteristics
(5,6)
T
A
= 0 to 70 C,V
CC
= 5V
±
10%, t
T
= 2 ns
#
Symbol
Parameter
-50
-60
Unit
Note
min.
max.
min.
max.
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