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參數(shù)資料
| 型號： | V826664G24SAIW-B1 |
| 廠商： | PROMOS TECHNOLOGIES INC |
| 元件分類： | DRAM |
| 英文描述： | 64M X 64 DDR DRAM MODULE, 0.75 ns, DMA200 |
| 封裝： | GREEN, DIMM-200 |
| 文件頁數(shù)： | 10/14頁 |
| 文件大?。?/td> | 178K |
| 代理商： | V826664G24SAIW-B1 |
ProMOS TECHNOLOGIES
V826664G24SA
5
V826664G24SA Rev. 1.3 April 2006
Serial Presence Detect Information
Bin Sort:
D0 (PC3200 @ CL 2.5-3-3)
D3 (PC3200 @ CL 3-3-3)
C0 (PC2700 @ CL 2.5-3-3)
Byte
#
Function described
Function Supported
Hex value
D0
D3
C0
B1
B0
D0
D3
C0
B1
B0
0
Defines # of Bytes written into serial memory at mod-
ule manufacturer
128bytes
80h
1
Total # of Bytes of SPD memory device
256bytes
08h
2
Fundamental memory type
SDRAM DDR
07h
3
# of row address on this assembly
13
0Dh
4
# of column address on this assembly
10
0Ah
5
# of module Rows on this assembly
2 Bank
02h
6
Data width of this assembly
64 bits
40h
7
.........Data width of this assembly
-
00h
8
VDDQ and interface standard of this assembly
SSTL 2.5V
04h
9
DDR SDRAM cycle time at highest CAS Latency
5ns
6ns
7ns
7.5ns
50h
60h
70h
75h
10
DDR SDRAM Access time from clock at highest CL ±0.65ns±0.65ns±0.70ns±0.75ns±0.75ns 65h
65h
70h
75h
11
DIMM configuration type(Non-parity, Parity, ECC)
Non-parity, ECC
00h
12
Refresh rate & type
7.8us & Self refresh
82h
13
Primary DDR SDRAM width
x8
08h
14
Error checking DDR SDRAM data width
N/A
00h
15
Minimum clock delay for back-to-back random col-
umn address
tCCD=1CLK
01h
16
DDR SDRAM device attributes : Burst lengths sup-
ported
2,4,8
0Eh
17
DDR SDRAM device attributes : # of banks on each
DDR SDRAM
4 banks
04h
18
DDR SDRAM device attributes : CAS Latency sup-
ported
2,2.5,3
1Ch
0Ch
19
DDR SDRAM device attributes : CS Latency
0CLK
01h
20
DDR SDRAM device attributes : WE Latency
1CLK
02h
21
DDR SDRAM module attributes
Differential clock /
non Registered
20h
22
DDR SDRAM device attributes : General
+/-0.2V voltage tolerance
00h
23
DDR SDRAM cycle time at second highest CL
5.0ns
6.0ns
7.5ns
10ns
50h
60h
75h
A0h
24
DDR SDRAM Access time from clock at second high-
est CL
±0.65ns±0.70ns±0.70ns±0.75ns±0.75ns 65h
70h
75h
25
DDR SDRAM cycle time at third highest CL
7.5ns
-
75h
00h
B1 (PC2100A @ CL 2-2-2)
B0 (PC2100B @ CL 2.5-3-3)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| V826664G24SAIW-C0 | 64M X 64 DDR DRAM MODULE, 0.75 ns, DMA200 |
| V827432U24SAIW-C0 | 32M X 72 DDR DRAM MODULE, 0.75 ns, DMA184 |
| V827464K24SXTG-C0 | 64M X 72 DDR DRAM MODULE, 0.75 ns, DMA184 |
| V827464N24SCIX-D3 | 64M X 72 DDR DRAM MODULE, 0.65 ns, DMA184 |
| V827464N24SCSL-D3 | 64M X 72 DDR DRAM MODULE, 0.65 ns, DMA184 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| V826664K24S | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:2.5 VOLT 64M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE |
| V827316K04S | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:2.5 VOLT 16M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE |
| V827332K04S | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:2.5 VOLT 32M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE |
| V827332N04S | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:2.5 VOLT 32M x 72 HIGH PERFORMANCE REGISTERED ECC DDR SDRAM MODULE |
| V827332U04S | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:2.5 VOLT 32M x 72 HIGH PERFORMANCE REGISTERED ECC DDR SDRAM MODULE |
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