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參數(shù)資料
| 型號： | V826664G24SAIW-B1 |
| 廠商： | PROMOS TECHNOLOGIES INC |
| 元件分類： | DRAM |
| 英文描述： | 64M X 64 DDR DRAM MODULE, 0.75 ns, DMA200 |
| 封裝： | GREEN, DIMM-200 |
| 文件頁數(shù)： | 11/14頁 |
| 文件大?。?/td> | 178K |
| 代理商： | V826664G24SAIW-B1 |
6
ProMOS TECHNOLOGIES
V826664G24SA
V826664G24SA Rev. 1.3 April 2006
26
DDR SDRAM Access time from clock at third highest
CL
±0.75ns±0.75ns
-
75h
00h
27
Minimum row precharge time (=tRP)
15ns
18ns
15ns
20ns
3Ch
48h
3Ch
50h
28
Minimum row activate to row active delay (=tRRD)
10ns
12ns
15ns
28h
30h
3Ch
29
Minimum RAS to CAS delay (=tRCD)
15ns
18ns
15ns
20ns
3Ch
48h
3Ch
50h
30
Minimum active to precharge time (=tRAS)
40ns
42ns
45ns
28h
2Ah
2Dh
31
Module ROW density
256MB
40h
32
Command and address signal input setup time
0.6ns
0.6ns 0.75ns 0.9ns
0.9ns
60h
75h
90h
33
Command and address signal input hold time
0.6ns
0.6ns 0.75ns 0.9ns
0.9ns
60h
75h
90h
34
Data signal input setup time
0.4ns
0.4ns 0.45ns 0.5ns
0.5ns
40h
45h
50h
35
Data signal input hold time
0.4ns
0.4ns 0.45ns 0.5ns
0.5ns
40h
45h
50h
36-40
Superset information (may be used in future)
00h
41
SDRAM device minimum active to active/auto-refresh
time (=tRC)
60ns
65ns
3Ch
41h
42
SDRAM device minimum active to autorefresh to ac-
tive/auto-refresh time (=tRFC)
70ns
72ns
75ns
46h
48h
4Bh
43
SDRAM device maximum device cycle time (=tCK
MAX)
12ns
30h
44
SDRAM device maximum skew between DQS and
DQ signals (=tDQSQ)
0.4ns
0.4ns 0.45ns 0.5ns
0.5ns
28h
2Dh
32h
45
SDRAM device maximum read datahold skew factor
(=tQHS)
0.55ns 0.55ns 0.60ns 0.75ns 0.75ns 55h
55h
60h
75h
46-61
Superset information (may be used in future)
-
00h
62
SPD data revision code
Initial release
11h
00h
63
Checksum for Bytes 0 ~ 62
-
A4h
BFh
4Ch
CBh
23h
64
Manufacturer JEDEC ID code
ProMOS
40h
65 -71 ....... Manufacturer JEDEC ID code
00h
72
Manufacturing location
02=Taiwan 05=China 0A=S-CH
73-90
Module part number (ASCII)
V826664G24SA
91
Manufacturer revison code (For PCB)
0
00
92
Manufacturer revison code (For component)
0
00
93
Manufacturing date (Year)
-
94
Manufacturing date (Week)
-
95~ 98 Assembly serial #
-
Byte
#
Function described
Function Supported
Hex value
D0
D3
C0
B1
B0
D0
D3
C0
B1
B0
Serial Presence Detect Information (cont.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| V826664G24SAIW-C0 | 64M X 64 DDR DRAM MODULE, 0.75 ns, DMA200 |
| V827432U24SAIW-C0 | 32M X 72 DDR DRAM MODULE, 0.75 ns, DMA184 |
| V827464K24SXTG-C0 | 64M X 72 DDR DRAM MODULE, 0.75 ns, DMA184 |
| V827464N24SCIX-D3 | 64M X 72 DDR DRAM MODULE, 0.65 ns, DMA184 |
| V827464N24SCSL-D3 | 64M X 72 DDR DRAM MODULE, 0.65 ns, DMA184 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| V826664K24S | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:2.5 VOLT 64M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE |
| V827316K04S | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:2.5 VOLT 16M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE |
| V827332K04S | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:2.5 VOLT 32M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE |
| V827332N04S | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:2.5 VOLT 32M x 72 HIGH PERFORMANCE REGISTERED ECC DDR SDRAM MODULE |
| V827332U04S | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:2.5 VOLT 32M x 72 HIGH PERFORMANCE REGISTERED ECC DDR SDRAM MODULE |
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