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參數(shù)資料
| 型號： | V827464K24SXTG-C0 |
| 廠商： | MOSEL-VITELIC |
| 元件分類： | DRAM |
| 英文描述： | 64M X 72 DDR DRAM MODULE, 0.75 ns, DMA184 |
| 封裝： | DIMM-184 |
| 文件頁數(shù)： | 15/15頁 |
| 文件大小： | 214K |
| 代理商： | V827464K24SXTG-C0 |
MOSEL VITELIC
V827464K24S
9
V827464K24S Rev.1.3 February 2003
DDR SDRAM IDD SPEC TABLE
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Detailed test conditions for DDR SDRAM IDD1 & IDD
IDD1 : Operating current: One bank operation
1. Typical Case : Vdd = 2.5V, T=25’ C
2. Worst Case : Vdd = 2.7V, T= 10’ C
3. Only one bank is accessed with tRC(min), Burst Mode, Address and Control inputs on NOP edge are changing once
per clock cycle. lout = 0mA
4. Timing patterns
- DDR200(100Mhz, CL=2) : tCK = 10ns, CL2, BL=4, tRCD = 2*tCK, tRAS = 5*tCK
Read : A0 N R0 N N P0 N A0 N - repeat the same timing with random address changing
*50% of data changing at every burst
- DDR266B(133Mhz, CL=2.5) : tCK = 7.5ns, CL=2.5, BL=4, tRCD = 3*tCK, tRC = 9*tCK, tRAS = 5*tCK
Read : A0 N N R0 N P0 N N N A0 N - repeat the same timing with random address changing
*50% of data changing at every burst
- DDR266A (133Mhz, CL=2) : tCK = 7.5ns, CL=2, BL=4, tRCD = 3*tCK, tRC = 9*tCK, tRAS = 5*tCK
Read : A0 N N R0 N P0 N N N A0 N - repeat the same timing with random address changing
*50% of data changing at every burst
Legend : A=Activate, R=Read, W=Write, P=Precharge, N=NOP
Symbol
A1
PC1600@CL=2
B0
PC2100B@CL=2.5
B1
PC2100A@CL=2
C0
PC2100A@CL=2.5
D0/D3/D4
PC3200A@CL=3
Unit
IDD0
680
870
1060
1080
mA
IDD1
850
1100
1280
1440
mA
IDD2P
120
mA
IDD2F
440
500
560
620
mA
IDD2Q
280
340
380
420
mA
IDD3P
210
290
370
450
mA
IDD3N
360
460
550
810
mA
IDD4R
1150
1400
1700
2430
mA
IDD4W
1180
1350
1600
2250
mA
IDD5
1600
1700
1800
1890
mA
IDD6
Normal
54
mA
Low power
33
mA
IDD7
1980
2580
3180
3600
mA
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|---|---|
| V827464N24S | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:2.5 VOLT 64M x 72 HIGH PERFORMANCE REGISTERED ECC DDR SDRAM MODULE |
| V8290 | 制造商:Visual Effects 功能描述:Mini Strobe Light 制造商:VISUAL EFFECTS 功能描述:MINI STROBE LIGHT |
| V82MA3A | 功能描述:壓敏電阻 82V 40A 120pF RoHS:否 制造商:EPCOS 產(chǎn)品:MLV 電壓額定值 DC:22 V 電壓額定值 AC:17 V 鉗位電壓:50 V 直徑: 峰值浪涌電流:30 A 浪涌能量額定值:75 mJ 電容:74.2 pF 工作溫度范圍:- 55 C to + 125 C 安裝:SMD/SMT 封裝:Reel |
| V82MA3B | 功能描述:壓敏電阻 82V 40A 120pF RoHS:否 制造商:EPCOS 產(chǎn)品:MLV 電壓額定值 DC:22 V 電壓額定值 AC:17 V 鉗位電壓:50 V 直徑: 峰值浪涌電流:30 A 浪涌能量額定值:75 mJ 電容:74.2 pF 工作溫度范圍:- 55 C to + 125 C 安裝:SMD/SMT 封裝:Reel |
| V82MA3S | 功能描述:壓敏電阻 3MM Axial RoHS:否 制造商:EPCOS 產(chǎn)品:MLV 電壓額定值 DC:22 V 電壓額定值 AC:17 V 鉗位電壓:50 V 直徑: 峰值浪涌電流:30 A 浪涌能量額定值:75 mJ 電容:74.2 pF 工作溫度范圍:- 55 C to + 125 C 安裝:SMD/SMT 封裝:Reel |
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