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參數(shù)資料
| 型號： | V8P10-G3/86A |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 8 A, 100 V, SILICON, RECTIFIER DIODE, TO-277A |
| 封裝： | GREEN, PLASTIC, SMPC, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 105K |
| 代理商： | V8P10-G3/86A |
New Product
V8P10
Vishay General Semiconductor
Document Number: 89005
Revision: 26-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
High Current Density Surface Mount
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.466 V at IF = 4 A
FEATURES
Very low profile - typical height of 1.1 mm
Ideal for automated placement
Trench MOS Schottky technology
Low forward voltage drop, low power
losses
High efficiency operation
“Green” molding compound (GMC)
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94V-0 flammability
rating.
“G” vs. “E” suffix defines molding as none green, “E”,
or green molding compound (GMC) “G”.
“G” is defined as halogen-free (HF) and antimony-free
molding compound.
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 and G3 suffix for consumer grade, meets JESD 201
class 1A whisker test, HE3 and HG3 suffix for
high reliability grade (AEC Q101 qualified), meets
JESD 201 class 2 whisker test
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling,
dc-to-dc
converters
and
polarity
protection applications.
Note:
There is no industry standard for definition of HF, or GMC for
components.
PRIMARY CHARACTERISTICS
IF(AV)
8 A
VRRM
100 V
IFSM
150 A
EAS
100 mJ
VF at IF = 8 A
0.582 V
TJ max.
150 °C
TO-277A (SMPC)
Anode 1
Anode 2
Cathode
K
K
2
1
TMBS
eSMPTM Series
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V8P10
UNIT
Device marking code
V810
Maximum repetitive peak reverse voltage
VRRM
100
V
Maximum average forward rectified current (Fig. 1)
IF(AV)
8A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
150
A
Non-repetitive avalanche energy
at IAS = 2.0 A, TJ = 25 °C
EAS
100
mJ
Operating junction and storage temperature range
TJ, TSTG
- 40 to + 150
°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| V8P10HE3/86A | 功能描述:肖特基二極管與整流器 8.0 Amp 100 Volt Single TrenchMOS RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| V8P10HE3/87A | 功能描述:肖特基二極管與整流器 8.0 Amp 100 Volt Single TrenchMOS RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| V8P10HE386A | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier |
| V8P10HE387A | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier |
| V8P10HM3/86A | 功能描述:肖特基二極管與整流器 8.0 Amp 100 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
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