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參數資料
| 型號： | V8P10-G3/86A |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 8 A, 100 V, SILICON, RECTIFIER DIODE, TO-277A |
| 封裝： | GREEN, PLASTIC, SMPC, 3 PIN |
| 文件頁數： | 3/5頁 |
| 文件大?。?/td> | 105K |
| 代理商： | V8P10-G3/86A |
New Product
V8P10
Vishay General Semiconductor
Document Number: 89005
Revision: 26-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Forward Power Loss Characteristics
Figure 3. Typical Instantaneous Forward Characteristics
10
8
6
4
2
0
25
50
75
100
125
150
175
A
v
er
age
F
o
rw
ard
C
u
rrent
(A)
Lead Temperature (°C)
Resistive or Inductive Load
T
L measured
at the Cathode Band Terminal
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
02
4
6
8
10
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
Average Forward Current (A)
A
v
er
age
P
o
w
er
Loss
(
W
)
D = t
p/T
t
p
T
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1.0
1.2
T
A = 150 °C
T
A = 125 °C
T
A = 25 °C
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
Figure 4. Typical Reverse Characteristics
Figure 5. Typical Junction Capacitance
Figure 6. Typical Transient Thermal Impedance
0.001
0.01
0.1
1
10
100
10
20
30
40
50
60
70
80
90
100
T
A = 150 °C
T
A = 125 °C
T
A = 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
C
u
rrent
(mA)
10
100
1000
10 000
0.1
1
10
100
Reverse Voltage (V)
J
u
nction
Capaci
tance
(pF)
Junction to Ambient
0.01
0.1
1
10
100
1
10
100
t - Pulse Duration (s)
T
ransient
Ther
mal
Impedance
(°C/
W
)
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相關代理商/技術參數 |
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| V8P10HE3/86A | 功能描述:肖特基二極管與整流器 8.0 Amp 100 Volt Single TrenchMOS RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| V8P10HE3/87A | 功能描述:肖特基二極管與整流器 8.0 Amp 100 Volt Single TrenchMOS RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| V8P10HE386A | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier |
| V8P10HE387A | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier |
| V8P10HM3/86A | 功能描述:肖特基二極管與整流器 8.0 Amp 100 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
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