參數(shù)資料
型號(hào): VCR2N
廠商: Vishay Intertechnology,Inc.
英文描述: JFET Voltage-Controlled Resistors
中文描述: 結(jié)型場(chǎng)效應(yīng)管壓控電阻
文件頁(yè)數(shù): 1/3頁(yè)
文件大?。?/td> 48K
代理商: VCR2N
VCR2N/4N/7N
Vishay Siliconix
Document Number: 70293
S-41225—Rev. F, 28-Jun-04
www.vishay.com
1
JFET Voltage-Controlled Resistors
PRODUCT SUMMARY
Part Number
V
GS(off)
Max (V)
V
(BR)GSS
Min (V)
r
DS(on)
Max ( )
VCR2N
7
25
60
VCR4N
7
25
600
VCR7N
5
25
8000
FEATURES
Continuous Voltage-Controlled
Resistance
High Off-Isolation
High Input Impedance
BENEFITS
Gain Ranging Capability/Wide Range
Signal Attenuation
No Circuit Interaction
Simplified Drive
APPLICATIONS
Variable Gain Amplifiers
Voltage Controlled Oscillator
AGC
DESCRIPTION
The VCR2N/4N/7N JFET voltage controlled resistors have an
ac drain-source resistance that is controlled by a dc bias
voltage (V
GS
) applied to their high impedance gate terminal.
Minimum r
DS
occurs when V
GS
= 0 V. As V
GS
approaches the
pinch-off voltage, r
DS
rapidly increases. This series of junction
FETs is intended for applications where the drain-source
voltage is a low-level ac signal with no dc component.
Key to device performance is the predictable r
DS
change
versus V
GS
bias where:
r
DS
bias
r
DS
(@ V
GS
0)
1–
V
GS
V
GS(off)
These n-channel devices feature r
DS(on)
ranging from 20 to
8000
processed per MIL-S-19500 (see Military Information).
. All packages are hermetically sealed and may be
D
S
G and Case
TO-206AA
(TO-18)
Top View
VCR2N, VCR4N
1
2
3
S
C
TO-206AF
(TO-72)
D
G
Top View
1
2
3
4
VCR7N
For applications information see AN105.
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