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參數(shù)資料
| 型號： | VCR2N |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | JFET Voltage-Controlled Resistors |
| 中文描述： | 結(jié)型場效應(yīng)管壓控電阻 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 48K |
| 代理商： | VCR2N |
VCR2N/4N/7N
Vishay Siliconix
www.vishay.com
2
Document Number: 70293
S-41225—Rev. F, 28-Jun-04
ABSOLUTE MAXIMUM RATINGS
a
Gate-Source, Gate-Drain Voltage
Gate Current
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation
b
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range
Storage Temperature
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
25 V
10 mA
300 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
55 to 175 C
65 to 200 C
. . . . . . . . . . . . . . . . . . .
Lead Temperature (
1
/
16
” from case for 10 sec.)
300 C
. . . . . . . . . . . . . . . . . . .
Notes:
a.
b.
T
= 25 C unless otherwise noted.
Derate 2 mW/ C above 25 C.
SPECIFICATIONS
(T
A
= 25 C UNLESS OTHERWISE NOTED)
Limits
VCR2N
VCR4N
VCR7N
Parameter
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Min
Max
Unit
Static
Gate-Source Breakdown Voltage
V
(BR)GSS
I
G
=
1 A, V
DS
= 0 V
55
25
25
25
V
Gate-Source Cutoff Voltage
V
GS(off)
I
GSS
V
DS
= 10 V, I
D
= 1 A
V
GS
=
15 V, V
DS
= 0 V
V
GS
= 0 V, I
D
= 10 mA
3.5
7
3.5
7
2.5
5
Gate Reverse Current
5
0.2
0.1
nA
20
60
Drain-Source On-Resistance
r
DS(on)
V
GS
= 0 V, I
D
= 1 mA
200
600
V
GS
= 0 V, I
D
= 0.1 mA
V
DS
= 0 V, I
G
= 1 mA
4000
8000
Gate-Source Forward Voltage
V
GS(F)
0.7
V
Dynamic
Drain-Source On-Resistance
r
ds(on)
V
GS
= 0 V, I
= 0 mA
f = 1 kHz
20
60
200
600
4000
8000
Drain-Gate Capacitance
C
dg
V
GD
=
10 V, I
= 0 mA
f = 1 MHz
7.5
3
1.5
pF
Source-Gate Capacitance
C
sg
V
GS
=
10 V, I
D
= 0 mA
f = 1 kHz
7.5
3
1.5
Notes:
a.
NCB/NPA/NT
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
TYPICAL CHARACTERISTICS (T
A
= 25 C UNLESS OTHERWISE NOTED)
0
0.2
0.4
0.6
0.8
1
0
Output Characteristics (VCR2N)
V
DS
Drain-Source Voltage (V)
0.5 V
2.0 V
2.5 V
1.0 V
1.5 V
0
0.1
0.2
0.3
0.4
0.5
Output Characteristics (VCR4N)
V
DS
Drain-Source Voltage (V)
3.0 V
30
25
20
15
5
10
1.0
0
0.8
0.6
0.4
0.2
V
GS(off)
=
4 V
V
GS
= 0 V
V
GS(off
)
=
4.2 V
V
GS
= 0 V
4.0 V
3.5 V
1.5 V
2.0 V
3.0 V
2.5 V
I
D
I
D
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| VCR2N_05 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:JFET Voltage-Controlled Resistors |
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