參數(shù)資料
型號: VG26V17400DJ-6
英文描述: DRAM|FAST PAGE|4MX4|CMOS|SOJ|26PIN|PLASTIC
中文描述: 內(nèi)存|快速頁面| 4MX4 |的CMOS | SOJ | 26PIN |塑料
文件頁數(shù): 11/25頁
文件大?。?/td> 212K
代理商: VG26V17400DJ-6
Document:1G5-0126
Rev.1
Page 11
VIS
VG26(V)(S)17400D
4,194,304 x 4 - Bit
CMOS Dynamic RAM
Read Cycle
Write Cycle
Read - Modigy - Write Cycle
Parameter
Symbol
t
RAC
t
CAC
t
AA
t
OEA
t
RCS
t
RCH
t
RRH
t
OFF
t
OEZ
VG26 (V) (S) 17400D
-5
Min
Max
Unit
Notes
-6
Min
Max
Access time from RAS
-
50
-
60
ns
12
Access time from CAS
-
13
-
15
ns
13,14
Access time from column address
-
25
-
30
ns
14,15
Access time from OE
-
13
-
15
ns
Read command setup time
0
-
0
-
ns
7
Read command hold time to CAS
0
-
0
-
ns
10,16
Read command hold time to RAS
0
-
0
-
ns
16
Output buffer turn-off time
0
13
0
15
ns
ns
17
Output buffer turn-off time from OE
0
13
0
15
17
Parameter
Symbol
t
WCS
t
WCH
t
WP
t
RWL
t
CWL
t
DS
t
DH
VG26 (V) (S) 17400D
-5
Min
Max
Unit
Notes
-6
Min
Max
Write command setup time
0
-
0
-
ns
7,18
Write command hold time
8
-
10
-
ns
Write command pulse width
8
-
10
-
ns
Write command to RAS lead time
13
-
15
-
ns
Write command to CAS lead time
8
-
10
-
ns
Data-in setup time
0
-
0
-
ns
ns
19
Data-in hold time
8
-
10
-
19
Parameter
Read - modify - write cycle time
Symbol
t
RWC
t
RWD
t
CWD
t
AWD
t
OEH
VG26 (V) (S) 17400D
-5
Min
Max
Unit
Notes
-6
Min
Max
125
-
150
-
ns
RAS to WE delay time
65
-
80
-
ns
18
CAS to WE delay time
30
-
35
-
ns
18
Column address to WE delay time
40
-
50
-
ns
ns
18
OE hold time from WE
8
-
10
-
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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