參數(shù)資料
型號(hào): VG26V17405EJ-6
英文描述: DRAM|EDO|4MX4|CMOS|SOJ|26PIN|PLASTIC
中文描述: 內(nèi)存| EDO公司| 4MX4 |的CMOS | SOJ | 26PIN |塑料
文件頁(yè)數(shù): 6/27頁(yè)
文件大?。?/td> 214K
代理商: VG26V17405EJ-6
Document:1G5-0124
Rev.1
Page 6
VIS
VG26(V)(S)17405
4,194,304 x 4 - Bit
CMOS Dynamic RAM
DC Characteristics; 5- Volt Verion
(T
a
= 0 to + 70 °C
,
V
CC
= + 5V
%,V
SS
= 0V)
Parameter
Symbol
Test Conditions
VG26(V)(S)17405
Unit
Notes
-5
-6
Min
Max
Min
Max
Operating current
I
CC1
RAS cycling
CAS, cycling
t
RC
= min
-
120
-
110
mA
1, 2
Standby
Current
LOW
power
S-version
I
CC2
TTL interface
RAS, CAS = V
IH
Dout = High-Z
-
2
-
2
mA
CMOS interface
RAS,
Dout = High-Z
-0.2V
-
0.25
-
0.25
mA
Standard
power
version
TTL interface
RAS, CAS = V
IH
Dout = High-Z
2
-
2
mA
CMOS interface
RAS,
Dout = High-Z
-0.2V
1
-
1
mA
RAS-only
refresh current
I
CC3
RAS cycling, CAS = V
IH
t
RC
= min
-
120
-
110
mA
1, 2
EDO page mode
current
I
CC4
t
RC
= min
-
90
-
80
mA
1, 3
CAS-before-RAS
refresh current
I
CC5
t
RC
= min
RAS, CAS cycling
-
120
-
110
mA
1, 2
Self-refresh current
(S - Version)
I
CC8
-
350
-
350
CAS- before- RAS long
refresh current
(S-Version)
I
CC9
Standby: V
CC
-
CAS before RAS refresh:
2048 cycles / 128ms
RAS, CAS:
0V
VCC-
(Max)
Dout = High-Z,
-
500
-
500
10
±
CAS
Vcc
CAS
Vcc
t
RAS
100
μ
s
μ
A
0.2V
RAS
V
IL
V
IH
t
RAS
0.2V
0.2V
V
IH
300ns
μ
A
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