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參數(shù)資料
| 型號(hào)： | VMO500-02F |
| 英文描述： | TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 500A I(D) |
| 中文描述： | 晶體管| MOSFET功率模塊|獨(dú)立| 200伏五（巴西）直| 500A（丁） |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 155K |
| 代理商： | VMO500-02F |
1999 IXYS All rights reserved
C3 - 18
C3
D
S
G
KS
Symbol
Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
200
V
VDGR
TJ = 25°C to 150°C; RGS = 10 k
200
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25°C
500
A
ID80
TC = 80°C
370
A
IDM
TC = 25°C, tP = 10 s
2000
A
PD
TC = 25°C
2200
W
TJ
-40 ...+150
°C
TJM
150
°C
Tstg
-40 ... +125
°C
VISOL
50/60 Hz
t = 1 min
3000
V~
IISOL ≤ 1 mA
t = 1 s
3600
V~
Md
Mounting torque (M6)
2.25-2.75/20-25 Nm/lb.in.
Terminal connection torque (M5)
2.5-3.7/22-33 Nm/lb.in.
Weight
typical including screws
250
g
VDSS
= 200 V
ID25
= 500 A
RDS(on) typ = 3.5 mW
N-Channel Enhancement Mode
Features
l
International standard package
l
Direct Copper Bonded Al
2O3 ceramic
base plate
l
Low R
DS(on) HDMOS
TM
process
l
Low package inductance for high
speed switching
l
Kelvin Source contact for easy drive
Applications
l
AC motor speed control for electric
vehicles
l
DC servo and robot drives
l
Switched-mode and resonant-mode
power supplies
l
DC choppers
Advantages
l
Easy to mount
l
Space and weight savings
l
High power density
l
Low losses
D = Drain
S =
Source
KS = Kelvin Source
G =
Gate
D
S
KS
G
Symbol
Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
min.
typ. max.
V
DSS
V
GS = 0 V, ID = 12 mA
200
V
V
GS(th)
V
DS = 20 V, ID = 44 mA
2
4
V
I
GSS
V
GS = ±20 V DC, VDS = 0
±500 nA
I
DSS
V
DS = 0.8 VDSS,VGS = 0 V
T
J = 25°C
2.4 mA
T
J = 125°C12 mA
R
DS(on)
V
GS = 10 V, ID = 0.5 ID25
3.5
4.2 m
Pulse test, t ≤ 300 s, duty cycle d ≤ 2 %
MegaMOSTMFET
Module
VMO 500-02F
Additional current limitation by external leads
E 72873
918
IXYS reserves the right to change limits, test conditions and dimensions.
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