參數(shù)資料
型號： VN0550
廠商： ELAN Microelctronics Corp .
英文描述： N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓500V,N溝道增強型垂直DMOS結構場效應管)
中文描述： N溝道增強型場效應管垂直的DMOS（擊穿電壓的500V，?溝道增強型垂直的DMOS結構場效應管）
文件頁數(shù)： 2/4頁
文件大?。?/td> 26K
代理商： VN0550
7-166
VN0550
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
C
= 25
°
C
1.0W
θ
jc
°
C/W
125
θ
ja
°
C/W
170
I
DR
*
I
DRM
TO-92
*
I
D
(continuous) is limited by max rated T
j
.
50mA
250mA
50mA
250mA
Thermal Characteristics
Switching Waveforms and Test Circuit
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Symbol
Parameter
Drain-to-Source
Breakdown Voltage
Min
Typ
Max
Unit
Conditions
BV
DSS
VN0550
500
V
V
GS
= 0V, I
D
= 1mA
V
GS(th)
V
GS(th)
I
GSS
I
DSS
Gate Threshold Voltage
Change in V
GS(th)
with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
2
4
V
V
GS
= V
DS
, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
V
GS
= 5V, V
DS
= 25V
V
GS
= 10V, V
DS
= 25V
V
GS
= 5V, I
D
= 50mA
V
GS
= 10V, I
D
= 50mA
V
GS
= 10V, I
D
= 50mA
V
DS
= 25V, I
D
= 50mA
-3.8
-5.0
100
10
mV/
°
C
nA
μ
A
mA
1
I
D(ON)
ON-State Drain Current
100
350
45
40
150
R
DS(ON)
60
1.7
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Notes:
1. All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Change in R
DS(ON)
with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
1
%/
°
C
m
50
100
45
55
10
8
2
pF
5
10
15
10
10
0.8
300
V
ns
V
GS
= 0V, I
SD
= 0.5A
V
GS
= 0V, I
SD
= 0.5A
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
Static Drain-to-Source
ON-State Resistance
mA
V
GS
= 0V, V
DS
= 25V
f = 1 MHz
V
DD
= 25V,
I
D
= 150mA,
R
GEN
= 25
ns
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相關代理商/技術參數(shù)
參數(shù)描述
VN0550_07 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Enhancement-Mode Vertical DMOS FETs
VN0550N3 功能描述:MOSFET 500V 60Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VN0550N3-G 功能描述:MOSFET 500V 60Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VN0550N3-G P002 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET
VN0550N3-G P003 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET
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