參數(shù)資料
型號: VN0605T
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓60V,最小夾斷電流0.18A的N溝道增強(qiáng)型MOSFET)
中文描述: N溝道增強(qiáng)型MOSFET晶體管(最小漏源擊穿電壓60V的,最小夾斷電流0.18A的N溝道增強(qiáng)型MOSFET的)
文件頁數(shù): 1/4頁
文件大小: 73K
代理商: VN0605T
VN10LLS, VN0605T, VN0610LL, VN2222LL
Vishay Siliconix
Document Number: 70212
S-00528—Rev. F, 03-Mar-00
www.vishay.com FaxBack 408-970-5600
11-1
N-Channel Enhancement-Mode MOSFET Transistors
Part Number
V
(BR)DSS
Min (V)
r
DS(on)
Max ( )
V
GS(th)
(V)
I
D
Min (A)
VN10LLS
60
5 @ V
GS
= 10 V
5 @ V
GS
= 10 V
5 @ V
GS
= 10 V
5 @ V
GS
= 10 V
0.8 to 2.5
0.32
VN0605T
0.8 to 3.0
0.18
VN0610LL
0.8 to 2.5
0.28
VN2222LL
0.6 to 2.5
0.23
Low On-Resistance: 2.5
Low Threshold: <2.1 V
Low Input Capacitance: 22 pF
Fast Switching Speed: 7 ns
Low Input and Output
Leakage
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffering
High-Speed Circuits
Low Error Voltage
Direct Logic-Level Interface: TTL/CMOS
Solid State Relays
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
Battery Operated Systems
VN0605T (V2)*
*Marking Code for TO-236
TO-92S
Top View
VN10LLS
S
D
G
1
2
3
TO-226AA
(TO-92)
Top View
VN0610LL
VN2222LL
S
D
G
1
2
3
G
TO-236
(SOT-23)
S
D
Top View
2
3
1
Parameter
Symbol
VN10LLS
VN0605T
VN0610LL
VN2222LL
Unit
Drain-Source Voltage
Gate-Source Voltage—Non-Repetitive
b
V
DS
V
GSM
V
GS
60
60
60
60
V
30
30
30
30
Gate-Source Voltage—Continuous
20
20
20
20
Continuous Drain Current
(T
J
= 150 C)
T
A
= 25 C
T
A
= 100 C
I
D
0.32
0.18
0.28
0.23
A
0.2
0.11
0.17
0.14
Pulsed Drain Current
a
I
DM
1.4
0.72
1.3
1.0
Power Dissipation
T
A
= 25 C
T
A
= 100 C
P
D
0.9
0.36
0.8
0.8
W
0.4
0.14
0.32
0.32
Maximum Junction-to-Ambient
R
thJA
139
350
156
156
C/W
Operating Junction and
Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Notes
a.
b.
Pulse width limited by maximum junction temperature.
t
p
50 s.
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