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參數資料
| 型號： | VN05N |
| 廠商： | 意法半導體 |
| 英文描述： | High Side Smart Power Solid State Relay(高邊智能化功率固態(tài)繼電器) |
| 中文描述： | 高邊智能電源固態(tài)繼電器（高邊智能化功率固態(tài)繼電器） |
| 文件頁數： | 4/11頁 |
| 文件大小： | 194K |
| 代理商： | VN05N |
ELECTRICAL CHARACTERISTICS
(continued)
PROTECTION AND DIAGNOSTICS (continued)
Symbol
V
SCL
(
)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Status Clamp Voltage
I
STAT
= 10 mA
I
STAT
= -10 mA
R
LOAD
< 10 m
6
-0.7
V
V
t
SC
Switch-off Time in
Short Circuit Condition
at Start-Up
Over Current
T
c
= 25
o
C
1.5
5
ms
I
OV
R
LOAD
< 10 m
R
LOAD
< 10 m
-40
≤
T
c
≤
125
o
C
T
c
= 85
o
C
60
A
I
AV
Average Current in
Short Circuit
Open Load Current
Level
Thermal Shut-down
Temperature
Reset Temperature
1.4
A
I
OL
5
180
mA
T
TSD
140
o
C
T
R
125
o
C
(*) The V
is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor
calculated to not exceed 10 mA at the input pin.
(
) Status determination > 100
μ
s after the switching edge.
FUNCTIONAL DESCRIPTION
The
device has
indicates
open
temperature conditions. The output signals are
processed by internal logic.
To protect the device against short circuit and
over-current condition, the thermal protection
turns the integrated Power MOS off at a minimum
junction temperature
of 140
temperature returns to about 125
o
C the switch is
automatically turned on again.
In short circuit conditions the protection reacts
with virtually no delay, the sensor being located in
the region of the die where the heat is generated.
a diagnostic output which
circuit
(no
load)
and
over
o
C.
When the
PROTECTING THE DEVICE AGAINST REVER-
SE BATTERY
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between pin 1 (GND) and
ground, as shown in the typical application circuit
(fig. 3).
The consequences of the voltage drop across
this diode are as follows:
–
If the input is pulled to power GND, a negative
voltage of -V
F
is seen by the device. (V
IL
, V
IH
thresholds and V
STAT
are increased by V
F
with
respect to power GND).
–
The undervoltage shutdown level is increased
by V
F
.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit in fig. 4), which becomes
the common signal GND for the whole control
board.
In this way no shift of V
IH
, V
IL
and V
STAT
takes
place and no negative voltage appears on the
INPUT pin; this solution allows the use of a
standard diode, with a breakdown voltage able to
handle any ISO normalized negative pulses that
occours in the automotive environment.
VN05N
4/11
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| VN05N(011Y) | 功能描述:功率驅動器IC High Side for SSR RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| VN05N(012Y) | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH SIDE SMART POWER SOLID STATE RELAY |
| VN05N | 制造商:STMicroelectronics 功能描述:MOSFET SMART SWITCH TO-220-5 |
| VN05N011Y | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PERIPHERAL DRIVER|1 DRIVER|BIPOLAR/MOS|ZIP|5PIN|PLASTIC |
| VN05N012Y | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PERIPHERAL DRIVER|1 DRIVER|BIPOLAR/MOS|SIP|5PIN|PLASTIC |
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