參數(shù)資料
型號(hào): VN0605T
廠商: CALOGIC LLC
元件分類: 小信號(hào)晶體管
英文描述: VN0605T N-Channel Enhancement-Mode MOS Transistor
中文描述: 180 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: CD5, 3 PIN
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 41K
代理商: VN0605T
VN10LLS, VN0605T, VN0610LL, VN2222LL
Vishay Siliconix
www.vishay.com
11-2
Document Number: 70212
S-04279
Rev. G, 16-Jul-01
Limits
VN10LLS
VN0610LL
VN0605T
VN2222LL
Parameter
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Min
Max
Unit
Static
Drain-Source
Breakdown Voltage
V
GS
= 0 V, I
D
= 100 A
70
60
60
V
(BR)DSS
V
GS
= 0 V, I
D
= 10 A
70
60
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 1 mA
2.1
0.8
2.5
0.8
3.0
0.6
2.5
V
DS
= 0 V, V
GS
=
20 V
100
100
Gate-Body Leakage
I
GSS
T
J
=125 C
500
nA
V
DS
= 0 V, V
GS
=
30 V
100
V
DS
= 50 V, V
GS
= 0 V
10
1.0
Zero Gate-Voltage
Drain Current
T
J
= 125 C
500
500
I
DSS
V
DS
= 48 V, V
GS
= 0 V
10
A
T
J
= 125 C
500
On-State Drain Current
b
I
D(on)
V
DS
= 10 V, V
GS
= 10 V
1000
750
500
750
mA
V
GS
= 4.5 V, I
D
= 50 mA
4.5
7.5
Drain-Source
On-Resistance
b
V
GS
= 5 V, I
D
= 0.2 A
4.5
7.5
7.5
r
DS(on)
V
GS
= 10 V, I
D
= 0.5 A
2.4
5
5
7.5
T
J
= 125 C
4.4
9
10
13.5
Forward
Transconductance
b
V
DS
= 10 V, I
D
= 0.5 A
230
100
100
g
fs
V
DS
= 10 V, I
D
= 0.2 A
180
80
mS
Common Source
Output Conductance
b
g
os
V
DS
= 5 V, I
D
= 50 mA
500
s
Dynamic
Input Capacitance
C
iss
22
60
60
60
Output Capacitance
C
oss
V
DS
=25 V, V
= 0 V
f = 1 MHz
11
25
25
25
pF
Reverse Transfer
Capacitance
C
rss
2
5
5
5
Switching
c
Turn-On Time
t
ON
V
DD
= 15 V, R
= 23 , I
V
GEN
= 10 V, R
G
= 25
0.6 A
7
10
10
Turn-Off Time
t
OFF
7
10
10
Turn-On Time
t
ON
V
DD
= 30 V, R
= 150 , I
V
GEN
= 10 V, R
G
= 25
0.2 A
7
20
ns
Turn-Off Time
t
OFF
11
20
Notes
a.
b.
c.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Pulse test: PW
300 s duty cycle
3%.
Switching time is essentially independent of operating temperature.
VNBF06
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