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參數(shù)資料
| 型號： | VN10K |
| 廠商： | ELAN Microelctronics Corp . |
| 英文描述： | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓60V,N溝道增強型垂直DMOS結(jié)構(gòu)場效應(yīng)管) |
| 中文描述： | N溝道增強型場效應(yīng)管垂直的DMOS（擊穿電壓60V的，?溝道增強型垂直的DMOS結(jié)構(gòu)場效應(yīng)管） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 31K |
| 代理商： | VN10K |
7-186
Symbol
BV
DSS
Parameter
Drain-to-Source
Breakdown Voltage
Gate Threshold Voltage
Change in V
GS(th)
with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
Min
60
Typ
Max
Unit
V
Conditions
V
GS
= 0V, I
D
= 100
μ
A
V
GS(th)
V
GS(th)
I
GSS
I
DSS
0.8
2.5
V
V
GS
= V
DS
, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
= 15V, V
DS
= 0V
V
GS
= 0V, V
DS
= 45V
V
GS
= 0V, V
DS
= 45V, T
A
125
°
C
V
GS
= 10V, V
DS
= 10V
V
GS
= 5V, I
D
= 0.2A
V
GS
= 10V, I
D
= 500mA
V
GS
= 10V, I
D
= 500mA,
V
DS
= 10V, I
D
= 500mA
-3.8
mV/
°
C
nA
μ
A
μ
A
A
%/
°
C
m
100
10
500
I
D(ON)
R
DS(ON)
ON-State Drain Current
Static Drain-to-Source
ON-State Resistance
0.75
7.5
5.0
R
DS(th)
G
FS
C
ISS
C
OSS
C
RSS
t
(ON)
t
(OFF)
V
SD
t
rr
Notes:
1. All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Change in R
DS(th)
with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Time
Turn-OFF Time
Diode Forward Voltage Drop
Reverse Recovery Time
0.7
100
48
16
60
25
5
10
10
pF
2
0.8
160
V
ns
V
GS
= 0V, I
SD
= 0.5A
V
GS
= 0V, I
SD
= 0.5A
VN10K
Package
I
D
(continuous)
1,2
I
D
(pulsed)
Power Dissipation
@ T
C
= 25
°
C
1.0W
θ
jc
°
C/W
125
θ
ja
°
C/W
170
I
DR
I
DRM
TO-92
0.31A
1.0A
0.31A
1.0A
Notes:
1. I
D
(continuous) is limited by max rated T
j
.
2. VN0106N3 can be used if an I
D
(continuous) of 0.5 is needed.
Thermal Characteristics
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
V
DS
= 25V, V
GS
= 0V
f = 1 MHz
V
DD
= 15V, I
D
= 0.6A,
R
GEN
= 25
ns
Switching Waveforms and Test Circuit
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
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